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The transport characteristics across the pulsed laser deposited Ni0.07Zn0.93O/Mg0.21Zn0.79O heterojunction exhibits p-n type semiconducting properties at 10 K while at 100 K, its characteristics become similar to that of an n-n junction. The reason for the same is attributed to the role of larger electronegativity of Ni as compared to Mg at 10 K and ionization of impurity states at 100 K. The above behavior is confirmed by performing the Hall measurements., Comment: Charge transport across NiZnO/MgZnO heterojunction at 10K and 100K is studied. Junction exhibits p-n type at 10K and n-n behavior at 100K. The behavior is confirmed by performing the Hall measurements

High-pressure synchrotron based angle dispersive x-ray diffraction (ADXRD) studies were carried out on SmGdO3 (SGO) up to 25.7GPa at room temperature. ADXRD results indicated a reversible pressure-induced phase transition from ambient monoclinic to hexagonal phase at about 8.9 GPa. The observed pressure-volume data were fitted into the third order Birch-Murnaghan equation of state yielding zero pressure bulk moduli B0 = 132(22) and 177(22) GPa for monoclinic and hexagonal phases, respectively. Pressure dependent micro-Raman spectroscopy further confirmed the phase transition. The mode Gruneisen parameters and pressure coefficients for different Raman modes corresponding to each individual phase of SGO were calculated.