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The phase diagram of VO$_2$ strained or doped with several trivalent ions consists of four phases; in order of increasing temperatures, three (M1, T and M2) are insulating while the fourth (R), above ~340 K, is metallic. These phases and the three phase transitions have been thoroughly investigated for about half a century by a wide variety of techniques, including electronic transport. While an upwards jump of the resistance of up to a factor of 2 was observed at the T-M2 transition and a drop of several orders of magnitude was observed at the M2$\to$R one, resistive switching at the M1$\to$T transition remained elusive over all these years. Here we report on the investigation of Ga- and Al-doped VO$_2$ single crystals, following the rather surprising appearance of a small and steep drop of a factor of ~ 0.12 in the resistance of Ga-doped VO$_2$ single crystals detected by pulsed and DC I-V measurements carried out at room temperature, below the T$\to$M2 phase transition. Similar results were obtained also from measurements on Al-doped VO2 single crystals. Raman spectra of Ga-, and Al-doped crystals resolved their structures as function of temperature. The accumulated results of the measurements on Ga-, and Al-doped single crystals provide evidence for identifying the resistive switching at T$_{\rm RS}$

The abrupt metal insulator transition in $VO_2$ is attracting considerable interest from both fundamental and applicative angles. We report on DC I-V characteristics measured on $VO_2$ single crystals in the two-probe configuration at several ambient temperatures below the insulator-metal transition. The insulator-mixed-metal-insulator transition is induced by Joule heating above ambient temperature in the range of negative differential resistivity (NDR). In this range the stability of V(I) is governed by the load resistance $R_L$. Steady state I(V) is obtained for $R_L> |dV/dI|_{max}$ in the NDR regime. For $R_L< |dV/dI|_{max}$ there is switching between initial and final steady states associated with peaks in the Joule power, that are higher the lower $R_L$ is. The peaks caused by steep switching are superfluous and damaging the samples. On the other hand, the large $R_L$ needed for steady state is the main power consumer in the circuit at high currents. The present work is motivated by the need to avoid damaging switching in the NDR regime while reducing the power consumption in the circuit. It is shown here that large resistance modulation can be obtained under steady state conditions with reduced power consumption by increasing the ambient temperature of the device above room temperature., Comment: 11 pages, 5 figures (main text) + 7 pages, 6 figures (supplementary material)