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This work presents a comparison of the structural, chemical and electronic properties of multi-layer graphene grown on SiC(000-1) by using two different growth approaches: thermal decomposition and chemical vapor deposition (CVD). The topography of the samples was investigated by using atomic force microscopy (AFM), and scanning electron microscopy (SEM) was performed to examine the sample on a large scale. Raman spectroscopy was used to assess the crystallinity and electronic behavior of the multi-layer graphene and to estimate its thickness in a non-invasive way. While the crystallinity of the samples obtained with the two different approaches is comparable, our results indicate that the CVD method allows for a better thickness control of the grown graphene., Comment: 6 pages, 5 figures

Titanium-island formation on graphene as a function of defect density is investigated. When depositing titanium on pristine graphene, titanium atoms cluster and form islands with an average diameter of about 10nm and an average height of a few atomic layers. We show that if defects are introduced in the graphene by ion bombardment, the mobility of the deposited titanium atoms is reduced and the average diameter of the islands decreases to 5nm with monoatomic height. This results in an optimized coverage for hydrogen storage applications since the actual titanium surface available per unit graphene area is significantly increased.

Phase-coherent acoustoelectric transport is reported.Aharonov-Bohm oscillations in the acoustoelectric current with visibility exceeding 100% were observed in mesoscopic GaAs rings as a function of an external magnetic field at cryogenic temperatures. A theoretical analysis of the acoustoelectric transport in ballistic devices is proposed to model experimental observations. Our findings highlight a close analogy between acoustoelectric transport and thermoelectric properties in ballistic devices.

We report the magneto-transport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magneto-resistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions.

Three different implementations of interaction-free measurements (IFMs) in solid-state nanodevices are discussed. The first one is based on a series of concatenated Mach-Zehnder interferometers, in analogy to optical-IFM setups. The second one consists of a single interferometer and concatenation is achieved in the time domain making use of a quantized electron emitter. The third implementation consists of an asymmetric Aharonov-Bohm ring. For all three cases we show that the presence of a dephasing source acting on one arm of the interferometer can be detected without degrading the coherence of the measured current. Electronic implementations of IFMs in nanoelectronics may play a fundamental role as very accurate and noninvasive measuring schemes for quantum devices., Comment: 12 pages, 10 figures

We show that an Aharonov-Bohm (AB) ring with asymmetric electron injection can act as a coherent detector of electron dephasing. The presence of a dephasing source in one of the two arms of a moderately-to-highly asymmetric ring changes the response of the system from total reflection to complete transmission while preserving the coherence of the electrons propagating from the ring, even for strong dephasing. We interpret this phenomenon as an implementation of an interaction-free measurement., Comment: 4 pages, 3 figures

Multi-terminal Aharonov-Bohm (AB) rings are ideal building blocks for quantum networks (QNs) thanks to their ability to map input states into controlled coherent superpositions of output states. We report on experiments performed on three-terminal GaAs/Al_(x)Ga_(1-x)As AB devices and compare our results with a scattering-matrix model including Lorentz forces and decoherence. Our devices were studied as a function of external magnetic field (B) and gate voltage at temperatures down to 350 mK. The total output current from two terminals while applying a small bias to the third lead was found to be symmetric with respect to B with AB oscillations showing abrupt phase jumps between 0 and pi at different values of gate voltage and at low magnetic fields, reminiscent of the phase-rigidity constraint due to Onsager-Casimir relations. Individual outputs show quasi-linear dependence of the oscillation phase on the external electric field. We emphasize that a simple scattering-matrix approach can not model the observed behavior and propose an improved description that can fully describe the observed phenomena. Furthermore, we shall show that our model can be successfully exploited to determine the range of experimental parameters that guarantee a minimum oscillation visibility, given the geometry and coherence length of a QN., Comment: 7 pages, 8 figures

Monoatomic layers of graphite can be electrically contacted and used as building blocks for new promising devices. These experiment are today possible thanks to the fact that very thin graphite can be identified on a dielectric substrate using a simple optical microscope. We investigate the mechanism behind the strong visibility of graphite and we discuss the importance of the substrate and of the microcope objective used for the imaging., Comment: 4 pages, 4 figures, abstract reviewed&accepted for presentation at EP2DS-17

The fabrication and performances of cantilevered probes with reduced parasitic capacitance starting from a commercial Si3N4 cantilever chip is presented. Nanomachining and metal deposition induced by focused ion beam techniques were employed in order to modify the original insulating pyramidal tip and insert a conducting metallic tip. Two parallel metallic electrodes deposited on the original cantilever arms are employed for tip biasing and as ground plane in order to minimize the electrostatic force due to the capacitive interaction between cantilever and sample surface. Excitation spectra and force-to-distance characterization are shown with different electrode configurations. Applications of this scheme in electrostatic force microscopy, Kelvin probe microscopy and local anodic oxidation is discussed., Comment: 4 pages and 3 figures. Submitted to Applied Physics Letters

A tunable directional coupler based on Coulomb Blockade effect is presented. Two electron waveguides are coupled by a quantum dot to an injector waveguide. Electron confinement is obtained by surface Schottky gates on single GaAs/AlGaAs heterojunction. Magneto-electrical measurements down to 350 mK are presented and large transconductance oscillations are reported on both outputs up to 4.2 K. Experimental results are interpreted in terms of Coulomb Blockade effect and the relevance of the present design strategy for the implementation of an electronic multiplexer is underlined., Comment: 4 pages, 4 figures, to be published in Applied Physics Letters

Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe 2DEG in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak lineshape clearly shows deviations from the predictions of ballistic weak localization theory., Comment: Submitted to Physical Review B, 25 pages, 7 figures