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Monitoring of radiation background in the near-surface atmosphere and of gamma rays, geoacoustic emission, and temperature in a borehole at 40m depth, as well as Doppler sounding on a low-inclined radio pass proceed at the Tien Shan mountain station (3340m a.s.l.) in Northern Tien Shan with common goal to search for seismogenic effects preceding earthquake. The flux of gamma rays in the borehole varies negligibly between the days, and it is not influenced by precipitations. Characteristic bay-like drops of the gamma ray flux were found (2-8)days before the M5.0-M6.2 earthquakes. In a M4.2 earthquake event with the 5.3km epicenter distance anomalies were detected (7-10)days before the earthquake in variation of the gamma ray flux, geoacoustic emission, and temperature. Simultaneously with gamma rays, a disturbance was detected in the Doppler shift of the ionospheric signal. Similarly, ionosphere disturbances triggered by the growth of radioactivity in the near-surface atmosphere were found at retrospective analysis of the Doppler shift data acquired after underground nuclear explosions at the Semipalatinsk testing site. This effect is considered from the viewpoint of the lithosphere-atmosphere-ionosphere coupling concept.

Stresses caused by thermal expansion coefficients mismatch of anodically bonded glass and silicon samples are studied. An analytical model to determine graphically the optimum bonding temperature is presented. It is essentially a model for thin-film stress but uses integration of the linear coefficient of thermal expansion difference between the bonding temperature and the working temperature. Recommendations for choosing the bonding temperature of silicon to two brands of glass (Corning 7740 and LK5) are made. Keywords: anodic bonding, field assisted bonding, thermal expansion, stress., Comment: Accepted manuscript. 6 pages, 4 figures (with subfigures), written in russian language

The residual stress induced in assembly is a common concern in electronic packaging. The mismatch in coefficient of thermal expansion between borosilicate glass and silicon, upon temperature variation, generates an internal stress state. This affects important characteristics of microelectromechanical devices or constituent elements. Such as self frequence or stiffness. Stresses caused by thermal expansion coefficients mismatch of anodically bonded glass and silicon samples are studied in this paper. Stress calculation based on lamination theory is presented. Usage examples of such calculations are described. For bonded silicon and LK-5 glass several results of calculations are presented. Stress distribution in bonded silicon and glass of several thicknesses is evaluated. Stress distribution in bonded glass-silicon-glass structure is evaluated. Bonded silicon surface stress dependence of glass to silicon wafer thickness ratio is evaluated. Experimental study of thermal mismatch stress in glass based on birefringence phenomenon was conducted. It's results are presented in this paper. Keywords: anodic bonding, field assisted bonding, thermal expansion, stress., Comment: 9 pages, 4 figures, written in russian. arXiv admin note: text overlap with arXiv:1802.01472

In this paper, after reviewing some of the most important concepts about Dark Matter (DM) and methods of its registration, in particular by using SQUIDs, we focus on two main problems. First, the possible mechanism of magnetic moment origin for DM particles, in the form of neutralino, is discussed: the presence of a magnetic moment means the existence of a new kind of interaction, whose corresponding cross section is estimated. Second, a simple uniform model for DM and Dark Energy (DE) is proposed. Two types of devices based on SQUID, in particular the SQUID-paramagnetic absorber and the SQUID-magnetostrictor systems, both suitable for investigations of above problems, are considered.