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The increasing scale of neural networks needed to support more complex applications has led to an increasing requirement for area- and energy-efficient hardware. One route to meeting the budget for these applications is to circumvent the von Neumann bottleneck by performing computation in or near memory. An inevitability of transferring neural networks onto hardware is that non-idealities such as device-to-device variations or poor device yield impact performance. Methods such as hardware-aware training, where substrate non-idealities are incorporated during network training, are one way to recover performance at the cost of solution generality. In this work, we demonstrate inference on hardware neural networks consisting of 20,000 magnetic tunnel junction arrays integrated on a complementary metal-oxide-semiconductor chips that closely resembles market-ready spin transfer-torque magnetoresistive random access memory technology. Using 36 dies, each containing a crossbar array with its own non-idealities, we show that even a small number of defects in physically mapped networks significantly degrades the performance of networks trained without defects and show that, at the cost of generality, hardware-aware training accounting for specific defects on each die can recover to comparable performance with ideal networks. We then demonstrate a robust training method that extends hardware-aware training to statistics-aware training, producing network weights that perform well on most defective dies regardless of their specific defect locations. When evaluated on the 36 physical dies, statistics-aware trained solutions can achieve a mean misclassification error on the MNIST dataset that differs from the software-baseline by only 2 %. This statistics-aware training method could be generalized to networks with many layers that are mapped to hardware suited for industry-ready applications., Comment: 17 pages, 9 figures

Magnetic skyrmions have so far been treated as two-dimensional spin structures characterized by a topological winding number describing the rotation of spins across the skyrmion. However, in real systems with a finite thickness of the material being larger than the magnetic exchange length, the skyrmion spin texture extends into the third dimension and cannot be assumed as homogeneous. Using soft x-ray laminography we reconstruct with about 20nm spatial (voxel) resolution the full three-dimensional spin texture of a skyrmion in an 800 nm diameter and 95 nm thin disk patterned into a trilayer [Ir/Co/Pt] thin film structure. A quantitative analysis finds that the evolution of the radial profile of the topological skyrmion number and the chirality is non-uniform across the thickness of the disk. Estimates of local micromagnetic energy densities suggest that the changes in topological profile are related to non-uniform competing energetic interactions. Theoretical calculations and micromagnetic simulations are consistent with the experimental findings. Our results provide the foundation for nanoscale magnetic metrology for future tailored spintronics devices using topology as a design parameter, and have the potential to reverse-engineer a spin Hamiltonian from macroscopic data, tying theory more closely to experiment., Comment: 18 pages, 4 figures

The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a 2-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3 % with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware., Comment: 22 pages plus 8 pages supplemental material; 7 figures plus 7 supplemental figures

The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $\alpha M_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thickness, W in our case, and also splitting the single W layer into two layers of sub-monolayer thickness, we have reduced $t_F$ while minimizing $\alpha$ and maximizing $M_S$, ultimately leading to lower $J_{c0}$ while maintaining high thermal stability. Bottom-pinned MRAM cells with device diameter in the range of 55-130 nm were fabricated, and $J_{c0}$ is lowest for the thinnest (1.2 nm) FLs, down to 4 MA/cm$^2$ for 65 nm devices, $\sim$30% lower than 1.7 nm FLs. The thermal stability factor $\Delta_{\mathrm{dw}}$, as high as 150 for the smallest device size, was determined using a domain wall reversal model from field switching probability measurements. With high $\Delta_{\mathrm{dw}}$ and lowest $J_{c0}$, the thinnest FLs have the highest spin-transfer torque efficiency., Comment: 6 pages, 6 figures

We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT), current induced self-heating and voltage controlled magnetic anisotropy also contribute to switching and can explain the RA dependencies of switching current density and STT efficiency. Our findings suggest that thermal optimization of perpendicular MRAM cells can result in significant reduction of switching currents.

Structural, electronic and dielectric properties of high-quality ultrathin BaTiO3 films are investigated. The films, which are grown by ozone-assisted molecular beam epitaxy on Nb-doped SrTiO3 (001) substrates and having thicknesses as thin 8 unit cells (3.2 nm), are unreconstructed and atomically smooth with large crystalline terraces. A strain-driven transition to 3D island formation is observed for films of of 13 unit cells thickness (5.2 nm). The high structural quality of the surfaces, together with the dielectric properties similar to bulk BaTiO3 and dominantly TiO2 surface termination, make these films suitable templates for the synthesis of high-quality metal-oxide multiferroic heterostructures for the fundamental study and exploitation of magneto-electric effects, such as a recently proposed interface effect in Fe/BaTiO3 heterostructures based on Fe-Ti interface bonds.

Using cross-sectional scanning tunneling microscopy on in situ fractured SrTiO$_{3}$, one of the most commonly used substrates for the growth of complex oxide thin films and superlattices, atomically smooth terraces have been observed on (001) surfaces. Furthermore, it was discovered that fracturing this material at room temperature results in the formation of stripe patterned domains having characteristic widths (~10 nm to ~20 nm) of alternating surface terminations that extend over a long-range. Spatial characterization utilizing spectroscopy techniques revealed a strong contrast in the electronic structure of the two domains. Combining these results with topographic data, we are able to assign both TiO$_{2}$ and SrO terminations to their respective domains. The results of this proof-of-principle experiment reveal that fracturing this material leads to reproducibly flat surfaces that can be characterized at the atomic-scale and suggests that this technique can be utilized for the study of technologically relevant complex oxide interfaces., Comment: 15 pages, 4 figures