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The ideal strength is crucial for predicting material behavior under extreme conditions, which can provide insights into material limits, guide design and engineer for enhanced performance and durability. In this work, we present a method within an allows for the estimation of tensile, shear, and indentation strengths in any crystallographic direction or plane. We have examined the strain-stress relationships of several well-known structures and compared our findings with previous work, demonstrating the effectiveness of our approach. Moreover, we performed extensive investigations into the indentation strength of hexagonal WC, \b{eta}-SiC, and MgA$l_2O_4$. The current study uncovers the modes of structural deformation and the underlying atomistic mechanisms. The insights gained from this study have significant implications for the further exploration and design of superhard materials., Comment: 15 pages,7 figures

Semiconductivity and superconductivity are remarkable quantum phenomena that have immense impact on science and technology, and materials that can be tuned, usually by pressure or doping, to host both types of quantum states are of great fundamental and practical significance. Here we show by first-principles calculations a distinct route for tuning semiconductors into superconductors by diverse large-range elastic shear strains, as demonstrated in exemplary cases of silicon and silicon carbide. Analysis of strain driven evolution of bonding structure, electronic states, lattice vibration, and electron-phonon coupling unveils robust pervading deformation induced mechanisms auspicious for modulating semiconducting and superconducting states under versatile material conditions. This finding opens vast untapped structural configurations for rational exploration of tunable emergence and transition of these intricate quantum phenomena in a broad range of materials.