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The integration of two-dimensional (2D) van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next-generation spintronic memory devices. However, achieving high-efficiency SOT switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, we show field-free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe-doped MoS2(Fe:MoS2) at up to 380 K with a current density of $7\times10^4 A cm^{-2}$. The in situ doping of Fe into monolayer MoS2 via chemical vapor deposition and the geometry-induced strain in the crystal break the rotational switching symmetry in Fe:MoS2, promoting field-free SOT switching by generating out-of-plane spins via spin-to-spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in-plane magnetic field verifies the existence of z spins in Fe:MoS2, inducing an antidamping-like torque that facilitates field-free SOT switching. A strong topological Hall effect (THE) was also observed, attributed to the interfacial Dzyaloshinskii-Moriya interaction (DMI), reducing the energy barrier for SOT switching. This field-free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power-efficient spintronic memory devices., Comment: 26 pages, including SOI

Two-Dimensional (2D) transition metal dichalcogenides (TMDs) have been the subject of extensive attention thanks to their unique properties and atomically thin structure. Because of its unprecedented room-temperature magnetic properties, iron-doped MoS2 (Fe:MoS2) is considered the next-generation quantum and magnetic material. It is essential to understand Fe:MoS2's thermal behavior since temperature and thermal load/activation are crucial for their magnetic properties and the current nano and quantum devices have been severely limited by thermal management. In this work, Fe:MoS2 is synthesized by doping Fe atoms into MoS2 using the chemical vapor deposition (CVD) synthesis and a refined version of opto-thermal Raman technique is used to study the thermal transport properties of Fe:MoS2 in the forms of single (1L), bilayer (2L), and tri-layer (3L). In the Opto-thermal Raman technique, a laser is focused on the center of a thin film and used to measure the peak position of a Raman-active mode. The lateral thermal conductivity of 1-3L of Fe:MoS2 and the interfacial thermal conductance between Fe:MoS2 and the substrate were obtained by analyzing the temperature-dependent and power-dependent Raman measurement, laser power absorption coefficient, and laser spot sizes. We also characterized Fe:MoS2's thermal transport at high temperature, and calculated Fe:MoS2's thermal transport by density theory function. These findings will shed light on the thermal management and thermoelectric designs for Fe:MoS2 based nano and quantum electronic devices.

Two dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDC) have received extensive research interests and investigations in the past decade. In this research, we report the first experimental measurement of the in plane thermal conductivity of MoS2 monolayer under a large mechanical strain using optothermal Raman technique. This measurement technique is direct without additional processing to the material, and MoS2's absorption coefficient is discovered during the measurement process to further increase this technique's precision. Tunable uniaxial tensile strains are applied on the MoS2 monolayer by stretching a flexible substrate it sits on. Experimental results demonstrate that, the thermal conductivity is substantially suppressed by tensile strains: under the tensile strain of 6.3%, the thermal conductivity of the MoS2 monolayer drops approximately by 62%. A serious of thermal transport properties at a group of mechanical strains are also reported, presenting a strain dependent trend. It is the first and original study of 2D materials' thermal transport properties under a large mechanical strain, and provides important information that the thermal transport of MoS2 will significantly decrease at a large mechanical strain. This finding provides the key information for flexible and wearable electronics thermal management and designs.

The topological Hall effect (THE) has attracted great attention since it provides an important probe of the interaction between electron and topological spin textures. THE has been considered an experimental signature of the topological spin texture of skyrmions. While THE has been widely reported in chiral magnets, oxide heterostructures, and hybrid systems such as ferromagnet/heavy metal and ferromagnet/topological insulators, the study of monolayer structures is lacking, hindering the understanding of noncollinear spin textures at the atomically thin scale. Here, we show a discernible THE via proximity coupling of Fe-doped monolayer WSe2 (Fe:WSe2) synthesized using chemical vapor deposition on a Pt Hall bar. Multiple characterization methods were employed to demonstrate that Fe atoms substitutionally replace W atoms, making a two-dimensional (2D) van der Waals (vdW) dilute magnetic semiconductor (DMS) at room temperature. Distinct from the intrinsic anomalous Hall effect, we found the transverse Hall resistivity of Fe:WSe2 displaying two additional dip/peak features in the temperature-dependent measurements, consistent with the contribution of THE. The topological Hall effect is attributed to the magnetic skyrmions that emerge from the Dzyaloshinskii-Moriya interactions at the Fe:WSe2 and Pt interface. Our work shows that a DMS synthesized from 2D vdW transition metal dichalcogenides is promising for realizing magnetic skyrmions and spintronic applications.

Optical excitation of chiral phonons plays a vital role in studying the phonon-driven magnetic phenomena in solids. Transition metal dichalcogenides host chiral phonons at high symmetry points of the Brillouin zone, providing an ideal platform to explore the interplay between chiral phonons and valley degree of freedom. Here, we investigate the helicity-resolved magneto-Raman response of monolayer MoS2 and identify a doubly degenerate Brillouin-zone-center chiral phonon mode at ~270 cm-1. Our wavelength- and temperature-dependent measurements show that this chiral phonon is activated through the resonant excitation of A exciton. Under an out-of-plane magnetic field, the chiral phonon exhibits giant Zeeman splitting, which corresponds to an effective magnetic moment of ~2.5mu_B. Moreover, we carry out theoretical calculations based on the morphic effects in nonmagnetic crystals, which reproduce the linear Zeeman splitting and Raman cross-section of the chiral phonon. Our study provides important insights into lifting the chiral phonon degeneracy in an achiral covalent material, paving a new route to excite and control chiral phonons.

We investigate the quantum transport dynamics of electrons in a multi-path Aharonov-Bohm interferometer comprising several parallel graphene nanoribbons. At low magnetic field strengths, the conductance displays a complex oscillatory behavior stemming from the interference of electron wave functions from different paths, reminiscent of the diffraction grating in optics. With increasing magnetic field strength, certain nanoribbons experience transport blockade, leading to conventional Aharonov-Bohm oscillations arising from two-path interference. We also discuss the impact of edge effects and the influence of finite temperature. Our findings offer valuable insights for experimental investigations of quantum transport in multi-path devices and their potential application for interferometry and quantum sensing., Comment: 7 pages, 8 figures

Transition metal dichalcogenides (TMDs) are two-dimensional (2D) materials with remarkable electrical, optical and chemical properties. One promising strategy to tailor TMD properties of TMDs is to create alloys through dopant-induced modification. Dopants can introduce additional states within the bandgap of TMDs, leading to changes in their optical, electronic, and magnetic properties. This paper overviews chemical vapor deposition (CVD) methods to introduce dopants into TMD monolayers. The advantages and limitations and their impacts on the doped TMDs' structural, electrical, optical, and magnetic properties are discussed. The dopants in TMDs modify the density and type of carriers in the material, thereby influencing the optical properties of the materials. The TMDs' magnetic moment and circular dichroism are also strongly affected by doping, which enhances the magnetic signal in the material. Finally, we highlight the different doping-induced magnetic properties of TMDs, including superexchange-induced ferromagnetism and valley Zeeman shift. Overall, this review paper provides a comprehensive summary of magnetic TMDs synthesized via CVD, which can guide future research on doped TMDs for various applications, such as spintronics, optoelectronics, and magnetic memory devices.

Two-dimensional (2D) heterostructures (HS) formed by transition-metal dichalcogenide (TMDC) monolayers offer a unique platform for the study of intralayer and interlayer excitons as well as moir\'e-pattern-induced features. Particularly, the dipolar charge-transfer exciton comprising an electron and a hole, which are confined to separate layers of 2D semiconductors and Coulomb-bound across the heterojunction interface, has drawn considerable attention in the research community. On the one hand, it bears significance for optoelectronic devices, e.g. in terms of charge carrier extraction from photovoltaic devices. On the other hand, its spatially indirect nature and correspondingly high longevity among excitons as well as its out-of-plane dipole orientation render it attractive for excitonic Bose-Einstein condensation studies, which address collective coherence effects, and for photonic integration schemes with TMDCs. Here, we demonstrate the interlayer excitons' out-of-plane dipole orientation through angle-resolved spectroscopy of the HS photoluminescence at cryogenic temperatures, employing a tungsten-based TMDC HS. Within the measurable light cone, the directly-obtained radiation profile of this species clearly resembles that of an in-plane emitter which deviates from that of the intralayer bright excitons as well as the other excitonic HS features recently attributed to artificial superlattices formed by moir\'e patterns.

Atomically thin materials such as graphene and semiconducting transition metal dichalcogenides have attracted extensive interest in recent years, motivating investigation into multiple properties. In this work, we used the opto thermal Raman technique to measure the thermal transport properties of a popular TMDC material WSe$_2$, in single atomic layer, bilayer, and trilayer forms.

The presence of wrinkles in Graphene Nanoribbons (GNR) and other two-dimensional (2D) materials significantly alter their mechanical, electronic, optical properties, which can be either beneficial or detrimental. Experimentally, it has been observed that during the commonly used growth process of GNR, water molecules, sourced from ambient humidity, can be diffused in between GNR and the substrate. The water diffusion causes wrinkle formation in GNR, which influences its properties. Furthermore, the diffused water eventually dries, creating the alteration not only in the geometry of Wrinkled Graphene Nanoribbons (WGNR) but also its features. Computational analysis of these phenomena can provide an atomistic-level understanding of the phenomena. Therefore, in this work, Molecular Dynamics (MD) simulations are performed to model the water diffusion and evaporation in between GNR and its substrate, and their effect on wrinkle formation and dynamics. Additionally, Density Functional Theory (DFT)-based analysis is used to characterize the difference in the electronic structure of WGNR caused by the change in wrinkle geometry. Our study reveals that the initially distributed wrinkles tend to coalesce to form a localized wrinkle whose configuration depends on the initial wrinkle geometry and the amount of diffused water. The wrinkle configuration changes upon drying, while it remains static until the complete drying. The movement of the localized wrinkle is the combination of three fundamental modes - bending, buckling, and sliding. The stress analysis reveals that the maximum stress is at the base of the wrinkle, and its magnitude is always below the plasticity limit. The DFT results provide insight into the potential of using the wrinkles to control the direction of electron flow for the applications in flexible electronics., Comment: Main Paper 23 pages, 13 figures

Transition Metal Dichalcogenides (TMDs) are one of the most studied two-dimensional materials in the last 5-10 years due to their extremely interesting layer dependent properties. Despite the presence of vast research work on TMDs, the complex relationship between the electrochemical and physical properties make them the subject of further research. Our main objective is to provide a better insight into the electronic structure of TMDs. This will help us better understand the stability of the bilayer post-growth homo/hetero products based on the various edge-termination, and different stacking of the two layers. In this regard, two Tungsten (W) based non-periodic chalcogenide flakes (sulfides and selenides) were considered. An in-depth analysis of their different edge termination and stacking arrangement was performed via Density Functional Theory method using VASP software. Our finding indicates the preference of chalcogenide (c-) terminated structures over the metal (m-) terminated structures for both homo and hetero layers, and thus strongly suggests the nonexistence of the m-terminated TMDs bilayer products.

Valley-selective optical selection rules and a spin-valley locking in transition-metal dichalcogenide (TMDC) monolayers are at the heart of "valleytronic physics", which exploits the valley degree of freedom and has been a major research topic in recent years. In contrast, valleytronic properties of TMDC bilayers have not been in the focus so much by now. Here, we report on the valleytronic properties and optical characterization of bilayers of WS2 as a representative TMDC material. In particular, we study the influence of the relative layer alignment in TMDC homo-bilayer samples on their polarization-dependent optical properties. Therefore, CVD-grown WS2 bilayer samples have been prepared that favor either the inversion symmetric AA' stacking or AB stacking without inversion symmetry during synthesis. Subsequently, a detailed analysis of reflection contrast and photoluminescence spectra under different polarization conditions has been performed. We observe circular and linear dichroism of the photoluminescence that is more pronounced for the AB stacking configuration. Our experimental findings are supported by theoretical calculations showing that the observed dichroism can be linked to optical selection rules, that maintain the spin-valley locking in the AB-stacked WS2 bilayer, whereas a spin-layer-locking is present the inversion symmetric AA' bilayer instead. Furthermore, our theoretical calculations predict a small relative shift of the excitonic resonances in both stacking configurations, which is also experimentally observed.

Monolayers of transition-metal dichalcogenides such as WSe2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their surroundings, we report how the choice of the substrate material affects the optical properties of monolayer WSe2. To accomplish this study, pump-density-dependent micro-photoluminescence measurements are performed with time-integrating and time-resolving acquisition techniques. Spectral information and power-dependent mode intensities are compared at 290K and 10K for exfoliated WSe2 on SiO2/Si, sapphire (Al2O3), hBN/Si3N4/Si, and MgF2, indicating substrate-dependent appearance and strength of exciton, trion, and biexciton modes. Additionally, one CVD-grown WSe2 monolayer on sapphire is included in this study for direct comparison with its exfoliated counterpart. Time-resolved micro-photoluminescence shows how radiative decay times strongly differ for different substrate materials. Our data indicates exciton-exciton annihilation as a shortening mechanism at room temperature, and subtle trends in the decay rates in correlation to the dielectric environment at cryogenic temperatures. On the measureable time scales, trends are also related to the extent of the respective 2D-excitonic modes' appearance. This result highlights the importance of further detailed characterization of exciton features in 2D materials, particularly with respect to the choice of substrate.

In most envisioned applications, full utilization of a graphene-carbon nanotube (CNT) construct requires maintaining the integrity of the graphene layer during the CNT growth step. In this work, we exhibit an approach towards controlled CNT growth atop graphene substrates where the reaction equilibrium between source hydrocarbon decomposition and carbon saturation into and precipitation from the catalyst nanoparticles shifts towards CNT growth rather than graphene consumption. By utilizing C2H4 feedstock, we demonstrate that the low temperature growth permissible with this gas suppresses undesirable catalytic hydrogenation and dramatically reduces the etching of the graphene layer to exhibit graphene-CNT hybrids with continuous, undamaged structures.

We fabricated dye sensitized graphene antidot superlattices with the purpose of elucidating the role of the localized edge state density. The fluorescence from deposited dye molecules was found to strongly quench as a function of increasing antidot filling fraction, whereas it was enhanced in unpatterned but electrically back-gated samples. This contrasting behavior is strongly indicative of a built-in lateral electric field that accounts for fluorescence quenching as well as p-type doping. These findings are of great interest for light-harvesting applications that require field separation of electron-hole pairs., Comment: NanoLetters, 2011

We observe conductivity oscillations with aperiodic spacing to only one side of the tunneling current in a dual-gated graphene field effect transistor with an n-p-n type potential barrier. The spacing and width of these oscillatoins were found to be inconsistent with pure Farbry-Perot-type interferences, but are in quantitative agreement with theoretical predictions that attribute them to resonant tunneling through quasi-bound impurity states. This observation may be understood as another signature of Klein tunneling in graphene heterojunctions and is of importance for future development and modeling of graphene based nanoelectronic devices., Comment: 3 pages, 3 figures

Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 10^5. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e. laterally ordered and scalable, as required for advanced quantum electronic devices., Comment: 15 pages, 4 figures

Polarization resolved micro-Raman spectroscopy was carried out at the edges of bilayer graphene. We find strong dependence of the intensity of the G band on the incident laser polarization, with its intensity dependence being 90 degrees out of phase for the armchair and zigzag case, in accordance with theoretical predictions. For the case of mixed-state edges we demonstrate that the polarization contrast reflects the fractional composition of armchair and zigzag edges, providing a monitor of edge purity, which is an important parameter for the development of efficient nanoelectronic devices., Comment: 3 pages, 3 figures, to appear in Applied Physics Letters