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© 2002 IOP Publishing Ltd. This work was partially supported by the Spanish Government under Grant No TIC98/0740., In this paper we report on the optimization of the SiNchi:H insulator, deposited by the electron cyclotron resonance (ECR) plasma method, as a dielectric for metal-insulator-semiconductor (MIS) structures built on an InP compound semiconductor. Two different MIS structures have been obtained in which the minimum of the interface trap density (D-it,D-min) at the insulator/InP interface attains values of device quality. In the first structure, a Al/SiN1.5:H/SiN1.6:H/InP dual-layer insulator was obtained and optimized after rapid thermal annealing treatment at 500 degreesC for 30s. After this treatment, the value of D-it,D-min was 9 x 10(11) cm(-2) eV(-1). In the second structure, the MIS structure was Al/SiN1.6:H/InP single-layer insulator, in which the InP surface was exposed to an N-2 plasma prior to the SiN1.6:H film deposition. In this case, the value of D-it.min was 1.6 x 10(12) cm(-2) eV(-1). Both types of structures were used as gate insulators on N-channel enhanced-mode MIS field-effect transistor test devices. From the dc output characteristics of the transistors, we obtain values for the electron channel mobility in the range 1550-1600 cm(-2) V-1 s(-1). This is a confirmation of the great potential of the ECR plasma method as a simple way to obtain device quality gate structures on InP without the use of passivation processes of the InP surface prior to the deposition of the gate dielectric, thus simplifying the whole device fabrication procedure., Spanish Government, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub

© 2004 IOP Publishing Ltd. This work has been supported by MCYT (Project MAT 2003-00455). DM acknowledges a grant from MCYT., Remote electron beam induced current (REBIC) and cathodoluminescence (CL) modes in the scanning electron microscope (SEM) have been used to investigate SnO2 sintered samples. The study of the electrically active boundaries present in the oxide shows a characteristic peak and trough (PAT) contrast after thermal treatments in oxygen. Temperature-dependent measurements of the REBIC contrast show the presence of a shallow defect level 60 meV below the conduction band. This level is asigned to oxygen species adsorbed on the defect-rich boundaries. Evolution of REBIC contrast of the grain boundaries with excitation density enabled us to perform local measurements of minority carrier diffusion length., MCYT, Depto. de Física de Materiales, Fac. de Ciencias Físicas, TRUE, pub

© 2017 IOP Publishing Ltd. The authors acknowledge the 'CAI de Técnicas Físicas', the 'CAI de Espectroscopía', 'CAI de Difracción de Rayos X' and 'Centro Nacional de Microscopía Electrónica' of the Universidad Complutense de Madrid for sample fabrication, FTIR, GIXRD and HRTEM measurements, respectively. This work was funded by the project TEC2010-18051 from the Spanish 'Ministerio de Economía y Competitividad', the 'Formación de Personal Investigador' program under grant BES-2011-043798, and the 'Juan de la Cierva-Formación' program under grant FJCI-2014-19643., This article studies the physical and electrical behavior of Gd2-xScxO3 layers grown by high pressure sputtering from metallic Gd and Sc targets. The aim is to obtain a high permittivity dielectric for microelectronic applications. The films were obtained by the deposition of a metallic nanolaminate of Gd and Sc alternating layers, which is afterwards in-situ oxidized by plasma. The oxide films obtained were close to stoichiometry, amorphous and with minimal interfacial regrowth. By fabricating metal-insulator-semiconductor capacitors we found that a moderate temperature annealing is needed to enhance permittivity, which reaches a high value of 32 while keeping moderate leakage. Finally, the feasibility of interface scavenging in this material with Ti gate electrodes is also demonstrated., Ministerio de Economía y Competitividad (MINECO), 'Formación de Personal Investigador' program, 'Juan de la Cierva-Formación' program, Depto. de Estructura de la Materia, Física Térmica y Electrónica, Fac. de Ciencias Físicas, TRUE, pub