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Your search keyword '"Bernard Previtali"' showing total 2 results
Start Over Author "Bernard Previtali" Journal 2004 ieee international soi conference (ieee cat. no.04ch37573)
2 results on '"Bernard Previtali"'

1. Experimental gate misalignment analysis on double gate SOI MOSFETs

Author

M. Mouis, Maud Vinet, F. Dauge, Thierry Poiroux, Bernard Previtali, Julie Widiez, and Simon Deleonibus

Subjects
Coupling, Materials science, Planar, business.industry, MOSFET, Electronic engineering, Optoelectronics, Silicon on insulator, Double gate, Wafer, business
Abstract

This paper reports for the first time an experimental analysis of gate misalignment influence on DG planar nMOSFETs performance and SCE, compared to simulations. In addition, gate coupling is demonstrated to be a sensitive parameter to evaluate the real on-wafer alignment.

Published
2005

2. 10 nm-gate-length transistors on ultra-thin SOI film: process realization and design optimisation

Author

J.M. Hartmann, R. Truche, J. Lolivier, Thierry Poiroux, Bernard Previtali, A.-M. Papon, Thierry Chevolleau, O. Faynot, M. Vinet, Simon Deleonibus, and Francis Balestra

Subjects
Materials science, Silicon, business.industry, Transistor, chemistry.chemical_element, Silicon on insulator, law.invention, chemistry, law, MOSFET, Optoelectronics, Thin film, business, Scaling, Realization (systems), AND gate
Abstract

We demonstrate ultra-thin SOI nMOSFETs with silicon thinned down to 8 nm and gate length as short as 10 nm. TTSD (to control access resistance) and pocket implantation (to extend scaling limits) are validated down to 10 nm. This performance, reported on different devices, evidences the possibility of UTSOI devices.

Published
2005

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