1. Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells
- Author
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Jeff Carapella, Manuel J. Romero, John F. Geisz, Scott Ward, Tom Moriarty, Keith Emery, Mark Wanlass, Anna Duda, William E. McMahon, Aaron J. Ptak, Daniel J. Friedman, David S. Albin, Phil Ahrenkiel, James Kiehl, A. E. Kibbler, Kim M. Jones, Sarah Kurtz, and Jerry M. Olson
- Subjects
Materials science ,Tandem ,business.industry ,Substrate (electronics) ,Epitaxy ,Solar energy ,Gallium arsenide ,chemistry.chemical_compound ,chemistry ,Optoelectronics ,Energy transformation ,Performance improvement ,business ,Voltage - Abstract
We present here a new approach to tandem cell design that offers near-optimum subcell bandgaps, as well as other special advantages related to cell fabrication, operation, and cost reduction. Monolithic, ultra-thin GaInP/GaAs/GaInAs triple-bandgap tandem solar cells use this new approach, which involves inverted epitaxial growth, handle mounting, and parent substrate removal. The optimal ~1-eV bottom subcell in the tandem affords an ~300 mV increase in the tandem voltage output when compared to conventional Ge-based, triple-junction tandem cells, leading to a potential relative performance improvement of 10-12% over the current state of the art. Recent performance results and advanced design options are discussed.
- Published
- 2006