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Start Over Author "Singanamalla, R." Journal 2006 international electron devices meeting
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1. Low VT Mo(O,N) metal gate electrodes on HfSiON for sub-45nm pMOSFET Devices

Author

Singanamalla, R., primary, Ravit, C., additional, Vellianitis, G., additional, Petry, J., additional, Paraschiv, V., additional, van Zijl, J.P., additional, Brus, S., additional, Verheijen, M., additional, Weemaes, R.G.R., additional, Kaiser, M., additional, van Berkum, J.G.M., additional, Hooker, J.C., additional, Vos, R., additional, Yu, H., additional, de Meyer, K., additional, Kubicek, S., additional, and Biesemans, S., additional

Published
2006
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