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Start Over Author "E. Deloffre" Journal 2007 ieee symposium on vlsi technology
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1. Reliable 3D Damascene MIM architecture embedded into Cu interconnect for a Ta2O5 capacitor record density of 17 fF/¿m2

Author

Bernard Flechet, C. Perrot, Alexis Farcy, J. Piquet, Mickael Gros-Jean, E. Deloffre, M. Thomas, M. Cordeau, C. Richard, Daniel Benoit, Joaquim Torres, Roland Pantel, P. Caubet, Cedric Bermond, Bernard Chenevier, and S. Guillaumet

Subjects
Interconnection, Materials science, business.industry, Copper interconnect, Electrical engineering, chemistry.chemical_element, Linearity, Capacitance, law.invention, Capacitor, chemistry, Stack (abstract data type), law, Optoelectronics, Tin, business, Voltage
Abstract

A new simple 3D Damascene architecture requiring only one additional mask is introduced for high-density MIM capacitors. TiN/Ta2O5/TiN stack deposited by PEALD has been integrated between Cu interconnect levels to maximize quality factor Q, reaching up to 17 fF/μm2 capacitance. High-performance, breakdown voltages over 15 V and good linearity, C1 = 76 ppm/V and C2 = 63 ppm/V2 at 100 kHz, make this capacitor an unique solution for analog and RF applications embedded in Cu BEOL.

Published
2007

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