1. A 2 GHz oscillator using a monolithically integrated AlN TFBAR
- Author
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Spartak Gevorgian, Martin Norling, Johannes Enlund, and Ilia Katardjiev
- Subjects
Materials science ,business.industry ,Multi-chip module ,Transistor ,Wide-bandgap semiconductor ,Electrical engineering ,dBc ,Integrated circuit ,law.invention ,Resonator ,CMOS ,law ,Phase noise ,Optoelectronics ,business - Abstract
A 2 GHz oscillator based on a solidly mounted AlN Thin-Film Bulk Acoustic Resonator (TFBAR) is reported. The oscillator is realised as a silicon-on-silicon Multi-Chip Module (MCM) where all passive elements, including the TFBAR, are monolithically integrated on a High-Resistivity Silicon (HRS) carrier. SiGe transistors are flipchip mounted on the MCM carrier. Measurements of the oscillators reveal a best phase-noise of −125 dBc/Hz at 100 kHz offset.
- Published
- 2008
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