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Your search keyword '"W.L. Chang"' showing total 2 results
Start Over Author "W.L. Chang" Journal 2010 ieee international reliability physics symposium
2 results on '"W.L. Chang"'

1. Role of interface layer in stress-induced leakage current in high-k/metal-gate dielectric stacks

Author

Eduard A. Cartier, W.L. Chang, and James H. Stathis

Subjects
Materials science, business.industry, Transistor, Electrical engineering, Time-dependent gate oxide breakdown, Hardware_PERFORMANCEANDRELIABILITY, Dielectric, law.invention, Stress (mechanics), Hardware_GENERAL, law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Breakdown voltage, Field-effect transistor, SILC, business, Hardware_LOGICDESIGN, High-κ dielectric
Abstract

The impact of the Silica-based interface layer (IL) thickness on stress induced leakage current (SILC) on highk/metal-gate transistors is studied at various constant voltage stresses (CVS) and at various temperatures. It is shown that high-k/metal-gate transistors reliability can be greatly improved with interface layer optimization.

Published
2010

2. High-K gate stack breakdown statistics modeled by correlated interfacial layer and high-k breakdown path

Author

P. Mora, Frederic Monsieur, James H. Stathis, Mustapha Rafik, Fernando Guarin, G. Yang, G. Ribes, W.L. Chang, and David Roy

Subjects
Materials science, CMOS, Logic gate, Path (graph theory), Statistics, Time-dependent gate oxide breakdown, Dielectric, Layer (electronics), Projection (linear algebra), High-κ dielectric
Abstract

We show that a model in which the breakdown of the interfacial layer induces a correlated breakdown in the high-K, at the same location, provides a good model of the high-K/IL gate stack statistics. We discuss of the implication of this model on the lifetime projection.

Published
2010

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