1. W-Band GaN MMIC with 842 mW output power at 88 GHz
- Author
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P. J. Willadsen, W.-S. Wong, Andy Fung, Robert Lin, Andrea Corrion, A. Kurdoghlian, Miroslav Micovic, Lorene Samoska, Adele E. Schmitz, Keisuke Shinohara, M. Hu, Paul F. Goldsmith, David H. Chow, Ivan Milosavljevic, Bjorn Lambrigtsen, Shawn D. Burnham, Paul Hashimoto, and Pekka Kangaslahti
- Subjects
Power gain ,Materials science ,business.industry ,Frequency band ,Gallium nitride ,High-electron-mobility transistor ,chemistry.chemical_compound ,chemistry ,W band ,Power module ,Extremely high frequency ,Optoelectronics ,business ,Monolithic microwave integrated circuit - Abstract
We report W-band GaN MMIC's that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology[1], the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 µm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14 V.
- Published
- 2010
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