1. Substrate diode effect on the performance of Silicon Germanium phototransistors
- Author
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Marc Rosales, Jean-Luc Polleux, Catherine Algani, Marjorie Grzeskowiak, Zerihun Gedeb Tegegne, Elodie Richalot, Carlos Viana, Electronique, Systèmes de communication et Microsystèmes (ESYCOM), Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris-Conservatoire National des Arts et Métiers [CNAM] (CNAM), University of the Philippines (UP System), Conservatoire National des Arts et Métiers [CNAM] (CNAM), Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris, Conservatoire National des Arts et Métiers - CNAM (FRANCE), Ecole de l'Innovation Technologique - ESIEE PARIS (FRANCE), Université Paris-Est Marne-La-Vallée - UPEM (FRANCE), University of the Philippines (PHILIPPINES), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris, and HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)
- Subjects
Materials science ,Microwave-photonics ,Electromagnétisme ,02 engineering and technology ,Opto-microwave performances ,Substrate effet ,01 natural sciences ,SiGe HPT ,law.invention ,chemistry.chemical_compound ,Responsivity ,020210 optoelectronics & photonics ,Optics ,law ,0103 physical sciences ,0202 electrical engineering, electronic engineering, information engineering ,Diode ,Phototransistor ,010302 applied physics ,Photocurrent ,business.industry ,Silicon-based photodetectors ,Photoconductivity ,Heterojunction ,Radio-over-Fiber ,Cutoff frequency ,Photodiode ,Silicon-germanium ,[SPI.ELEC]Engineering Sciences [physics]/Electromagnetism ,chemistry ,Optoelectronics ,business - Abstract
International audience; This paper provides a study on the substrate effect on the opto-microwave behavior of Silicon-Germanium Heterojunction bipolar Photo-Transistors (HPT). An Opto-Microwave Scanning Near Field Optical Microscopy (OM-SNOM) is performed to observe the distribution of photocurrent and dynamic behavior over the structure of the phototransistor. The photocurrent generated in the photodiode created by a n++ sub-collector and p+ substrate is extracted and analyzed. A maximum substrate diode current of 700μA is observed at 850nm with a related cutoff frequency of 0.42GHz. We have extracted low frequency responsivity (at 50MHz) bandwidth product of 109.2 MHzA/W. Finally, this study will provide a design guide line for Si base phototransistors.
- Published
- 2015
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