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The Bi-mode Gate Commutated Thyristor (BGCT) is a reverse conducting Gate Commutated Thyristor (GCT) where the diode regions are intertwined with GCT parts. In this work we examine the impact of shallow diode-anodes on the operation of the GCT and propose the introduction of optimised High Power Technology (HPT+) in the GCT part. In order to assess and compare the new designs with the conventional, a multi-cell mixed mode model for large area device modelling was used. The analysis of the simulation results show that the shallow diode does not affect the MCC whereas the introduction of the HPT+ allows for a step improvement.

In this work we present the simulation and experimental results of the “Cross Switch (XS)-Hybrid” built with 3.3kV Si-IGBTs and SiC-MOSFETs. We have analyzed the switching performance, mainly the turn-off behavior of the XS-Hybrid (a parallel arrangement of a Si-IGBT and a SiC-MOSFET) with the aid of Sentaurus TCAD device simulations. We discuss in detail the current sharing mechanism between these two devices and hence the distribution of the turn-off losses and the stress (peak power density, dynamic avalanche) on the devices during switching. In addition, we have investigated the turn-off behavior of the XS-Hybrid by variation of the area ratio between the Si-IGBT and SiC-MOSFET, variation of the gate resistance, and variation of the gate resistance ratio. To investigate the switching behavior of the XS-Hybrid, first the simulation models have been adjusted to match the experimental results of the 3.3kV Si-IGBT and SiC-MOSFET. Furthermore, the simulation and experimental results of the 3.3kV XS-Hybrid are compared with the full 3.3kV Si-IGBT and full 3.3kV SiC-MOSFET reference devices.