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In this paper, we presents the effect of higher back plane doping on analog figure of merit of fully depleted-silicon on insulator (FD-SOI) MOSFETs at RF frequencies. Procedure for DC and RF parameter extraction at RF frequencies has been discussed. Surface potential based Industry standard BSIM-IMG model for FD-SOI MOSFETs with enhanced gate parasitic network is used for validation of extracted DC and RF parameters such as gate resistance, gate parasitic capacitance, output conductance, transconductance.

An accurate physics-based lumped-circuit model, representing the nonquasi-static effect and the distributed polygate electrode resistance in bulk MOSFET is proposed. In our approach, an improved physical equivalent circuit capturing NQS effect is developed by using pole-zero compensation technique. The new model takes into account the inherent delay in the response of channel charges to the applied voltage. The proposed model is implemented in BSIM6 MOSFET model, and it is validated with Y-parameter data obtained from technology computer-aided design device simulations. The proposed model is in very good agreement with the device data up to 50/t, which ensures that it is suitable for most RF applications over any other computationally complex compact models.

In this paper we have proposed new physics based analytical models for transport and flicker noise in field effect transistors (FETs) working in the quasi-ballistic regime. The model is capable of accurately predicting the device current and low frequency flicker noise power spectral density for all drain and gate biases and includes short channel effects. It takes length scaling into account and can be used for the full range of devices starting from complete drift-diffusive to completely ballistic. This is the first time an analytical model of flicker noise for quasi-ballistic devices is being presented. The model is generic and can be used for any device geometry and construction. The model has been verified with experimental data from literature.

In this paper, we demonstrate using extensive TCAD simulations that low frequency noise behavior is significantly different in presence of halo implants. The study of the noise behavior is extended to source side halo, drain side halo, symmetric halos and uniformly doped devices for different doping and length of the halo regions. Our study shows that source side halo region is responsible for the anomalous noise behavior in saturation. Such noise behavior can be accurately modeled with the presented SPICE model over wide range of biases and geometries. This study physically explains the trends observed in low frequency noise measurement in advanced CMOS technologies.