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Your search keyword '"Harshit Agarwal"' showing total 4 results
Start Over Author "Harshit Agarwal" Journal 2016 ieee international conference on electron devices and solid-state circuits (edssc)
4 results on '"Harshit Agarwal"'

1. Modeling of GeOI and validation with Ge-CMOS inverter circuit using BSIM-IMG industry standard model

Author

Chenming Hu, Sourabh Khandelwal, Heng Wu, Pragya Kushwaha, Harshit Agarwal, Peide D. Ye, Yogesh Singh Chauhan, Yen-Kai Lin, Juan P. Duarte, and Huan-Lin Chang

Subjects
010302 applied physics, Materials science, business.industry, Industry standard, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, 0103 physical sciences, Electronic engineering, Inverter, BSIM, 0210 nano-technology, business
Published
2016

2. Modeling of high voltage LDMOSFET using industry standard BSIM6 MOS model

Author

Sourabh Khandelwal, Chenming Hu, Renaud Gillon, Yogesh Singh Chauhan, Yen-Kai Lin, Harshit Agarwal, and Chetan Gupta

Subjects
010302 applied physics, LDMOS, Materials science, 0103 physical sciences, Industry standard, Electronic engineering, High voltage, 02 engineering and technology, 021001 nanoscience & nanotechnology, 0210 nano-technology, 01 natural sciences
Published
2016

3. Predictive effective mobility model for FDSOI transistors using technology parameters

Author

Mandar S. Bhoir, Sourabh Khandelwal, Chenming Hu, Juan P. Duarte, Huan-Lin Chang, Yen-Kai Lin, Harshit Agarwal, Yogesh Singh Chauhan, Pragya Kushwaha, Nihar R. Mohapatra, and IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC)

Subjects
010302 applied physics, Mobility model, business.industry, Computer science, Transistor, Electrical engineering, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, law.invention, law, 0103 physical sciences, 0210 nano-technology, Telecommunications, business
Abstract

The formulation of effective mobility for fully depleted silicon-on-insulator (FDSOI) transistors is a very challenging task. As vertical electric field (Eeff ) changes it’s sign from positive to negative according to the front and back channel dominance which results in non-unique relationship between Eeff and carrier distribution. This is the first time, when a predictive mobility model for wide range of back gate biases, solely dependent on technology parameters (front and back gate oxide thickness Tox=box, threshold voltage Vth, front/back gate bias Vfg=bg and flat-band voltage Vfb) is proposed. This predictive mobility model allows the user to predict the deviation in device characteristics due to the variations in the device structure., by Pragya Kushwaha, Harshit Agarwal, Mandar Bhoir, Nihar R. Mohapatra, Sourabh Khandelwal, Juan Pablo Duarte, Yen-Kai Lin, Huan-Lin Chang, Chenming hu and Yogesh Singh Chauhan

Published
2016

4. Modeling of threshold voltage for operating point using industry standard BSIM-IMG model

Author

Chenming Hu, Pragya Kushwaha, Harshit Agarwal, Sourabh Khandelwal, Yen-Kai Lin, Yogesh Singh Chauhan, Huan-Lin Chang, Juan P. Duarte, and Rahul Agarwal

Subjects
010302 applied physics, Operating point, Materials science, business.industry, Industry standard, Electrical engineering, 02 engineering and technology, IMG, computer.file_format, 021001 nanoscience & nanotechnology, 01 natural sciences, Threshold voltage, 0103 physical sciences, Electronic engineering, BSIM, 0210 nano-technology, business, computer
Published
2016

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