1. Growth and applications of GeSn-related group-IV semiconductor materials
- Author
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A. Suzuki, Yosuke Shimura, Wakana Takeuchi, Takashi Yamaha, Takanori Asano, Shigeaki Zaima, Osamu Nakatsuka, Kouta Takahashi, Shinichi Ike, Mitsuo Sakashita, Yuki Nagae, and Masashi Kurosawa
- Subjects
010302 applied physics ,Materials science ,Silicon ,business.industry ,Semiconductor materials ,chemistry.chemical_element ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Epitaxy ,01 natural sciences ,Semiconductor ,chemistry ,Molecular beam epitaxial growth ,Group (periodic table) ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,Electronic band structure ,business - Abstract
We have developed the epitaxial growth technology of Ge 1−x Sn x and related group-IV materials. The crystalline properties and energy band structure have been investigated for integrating group-IV semiconductors into Si ULSI platform.
- Published
- 2016
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