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The three-dimensional integrated circuits (3D ICs) based on through silicon via (TSV) technology offer a solution to meet the continuously increasing demand on high-speed electronic products. In order to comprehensively evaluate the signal transmission of TSV in increasing signal frequency, accuracy equivalent circuit model is necessary. In this paper, a method of double-T type equivalent circuit modelling for TSVs is proposed and applied to coaxial TSV and ground-signal (GS)-type TSVs. Furthermore, the transmission parameters (S21) of the double-T models are evaluated by SPICE and compared with the results of 3-D full-wave electromagnetic field simulation (HFSS). The good accordance of the results up to 50GHz verifies the accuracy of the proposed method.

The polymer-cavity through-silicon vias (TSVs) on low resistivity silicon (LRSi) are proposed in this letter to reduce the conductive substrate losses for microwave applications, due to that the coupling loss of conventional LRSi is considerable in high speed three-dimensional integrated circuits (3-D ICs). The accurate wideband equivalent circuit model and simplified π-model are derived based on the physical design parameters, which are established by the ADS software. Well agreements between the proposed models and 3D full-wave EM field simulation of Ansoft's HFSS are shown with the operating frequencies up to 20 GHz.

A simple formula for the internal impedance of mixed carbon nanotube (CNT) bundles is proposed in this paper. It can appropriately capture the skin effect as well as temperature effect of mixed CNT bundles. The computing time and results of the simple formula and the numerical calculation are compared with various mean diameters, standard deviations, and temperatures. It is shown that the proposed simple formula can improve the efficiency dramatically, and has very high accuracy in the whole frequency range considered, with maximum errors of 1.2% and 2.5% for the resistance and the internal inductance, respectively.