1. Gate Grounded n-MOS Sensibility to Ionizing Dose
- Author
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Antoine Touboul, Laurent Dusseau, Jerome Boch, Salvatore Danzeca, E. Leduc, A. Michez, S. Furic, B. Azais, T. Borel, Epicentre [Paris] [Médecins Sans Frontières], Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Atmel Corporation (ATMEL), ATMEL, Radiations et composants (RADIAC), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Direction générale de l'armement [Bagneux] (DGA), European Organization for Nuclear Research (CERN), Centre Spatial Universitaire de Montpellier-Nîmes (CSU), and Université de Montpellier (UM)
- Subjects
Materials science ,Structure analysis ,business.industry ,Critical event ,Integrated circuit ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,law.invention ,law ,Logic gate ,Optoelectronics ,ggNMOS ,business ,Lead (electronics) ,ComputingMilieux_MISCELLANEOUS ,Degradation (telecommunications) - Abstract
ESD (electrostatic discharges) is one of the most critical event leading most of the time to the destruction of integrated circuits. Nowadays, most of the integrated circuits are design with inbuilt ESD protections structures that have to be electrically neutral. TID degradation on Gate Grounded nMOSFETs is investigated in this paper. Degradation hypothesis and structure analysis performed on GGnMOS from Microchip have highlighted some possible failure that can lead to an inability to protect properly an integrated circuit, or to an increase of the leakage current of those structure.
- Published
- 2018
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