1. Low Pumping Threshold GeSn/SiGeSn Multiple Quatum Well Lasers
- Author
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Daniela Stange, Nils von den Driesch, Detlev Grützmacher, Jean-Michel Hartmann, Dan Buca, Zoran Ikonic, and Denis Rainko
- Subjects
010302 applied physics ,Reactive gas ,I band ,Materials science ,business.industry ,Physics::Optics ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Laser ,Epitaxy ,01 natural sciences ,law.invention ,Optical pumping ,law ,Fiber laser ,0103 physical sciences ,Optoelectronics ,0210 nano-technology ,business ,Lasing threshold ,Quantum - Abstract
GeSn/SiGeSn multiple quantum well structures have been grown by means of low temperature reactive gas source epitaxy on Ge pseudosubstrates. The MQW structures exhibit type I band alignment. Optically pumped μ-disc laser exhibit a threshold of 40kW/cm2 to obtain optically pumped lasing.
- Published
- 2018
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