1. Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing
- Author
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Michael Schruter, Xiaodi Jin, Hanbin Ying, Markus Müller, Jeffrey W. Teng, Milad Frounchi, John D. Cressler, and Sunil G. Rao
- Subjects
Materials science ,Physics::Instrumentation and Detectors ,business.industry ,Transistor ,Semiconductor device modeling ,Cryogenics ,Low-noise amplifier ,Silicon-germanium ,law.invention ,chemistry.chemical_compound ,chemistry ,law ,Optoelectronics ,Wideband ,business ,Quantum computer ,Electronic circuit - Abstract
A HICUM/L0 compact model is extracted for advanced SiGe HBTs operating at 12 K, targeting potential use for control and readout applications in quantum computing. Due to the presence of transistor non-idealities, extraction procedures are modified from room temperature approaches. The resultant compact model shows good accuracy in both small-signal and large-signal prediction when compared to 12 K measurements for a wideband cryogenic low noise amplifier. Important factors for model accuracy are investigated through sensitivity analysis. This is the first demonstration of a DC, small-signal, and large-signal compact model for SiGe HBTs operating at deep cryogenic temperatures.
- Published
- 2020