1. Full-Band Monte Carlo simulations of GaAs p-i-n Avalanche PhotoDiodes: What Are the Limits of Nonlocal Impact Ionization Models?
- Author
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David Esseni, Giorgio Biasiol, Ralph H Menk, A. Pilotto, Sergio Carrato, M. Antonelli, Pierpaolo Palestri, Francesco Driussi, Fulvia Arfelli, D. De Angelis, Luca Selmi, Camilla Nichetti, Giuseppe Cautero, T. Steinhartova, Pilotto, A., Driussi, F., Esseni, D., Selmi, L., Antonelli, M., Arfelli, F., Biasiol, G., Carrato, S., Cautero, G., De Angelis, D., Menk, R. H., Nichetti, C., Steinhartova, T., and Palestri, P.
- Subjects
Impact Ionization ,010302 applied physics ,Physics ,APDS ,Mean free path ,Monte Carlo method ,Avalanche Photodiodes ,Full-Band Monte Carlo ,02 engineering and technology ,021001 nanoscience & nanotechnology ,Noise figure ,Avalanche photodiode ,Kinetic energy ,01 natural sciences ,Computational physics ,law.invention ,Impact ionization ,law ,0103 physical sciences ,Avalanche Photodiode ,0210 nano-technology ,Voltage - Abstract
We present a Full-Band Monte Carlo (FBMC) investigation of impact ionization in GaAs p-i-n Avalanche Photodiodes (APDs). FBMC simulations have been used to compute the gain and the excess noise factor and a new equation has been derived for the extraction of history-dependent impact ionization coefficients from FBMC simulations. Results from FBMC are then compared with the ones of nonlocal historydependent impact ionization models. We found that at high reverse bias voltages it is important to take into account the fact that secondary carriers are generated with nonzero kinetic energy. Finally, we propose an improved history-dependent model using an energy-dependent mean free path.
- Published
- 2020
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