1. Reconfigurable Germanium Quantum-Dot Arrays for CMOS Integratable Quantum Electronic Devices
- Author
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Po-Yu Hong, I. H. Chen, Horng-Chih Lin, I-Hsiang Wang, Thomas George, Pei-Wen Li, Ting Tsai, M. T. Kuo, and Rong-Cun Pan
- Subjects
Thermal oxidation ,Materials science ,business.industry ,chemistry.chemical_element ,Reconfigurability ,Germanium ,chemistry ,CMOS ,Quantum dot ,Logic gate ,Optoelectronics ,Electronics ,business ,Lithography - Abstract
We report the first-of-kind scalability and tunability of Ge QDs that are controllably sized, closely coupled, and self-aligned with control gates, using a combination of lithographic patterning, spacer technology, and self-assembled growth. The core experimental design is based on the thermal oxidation of poly-SiGe spacer islands designated at each included-angle location of designed Si 3 N 4 /c-Si ridge structures. Multiple Ge QDs with good size tunability of 7–20 nm were controllably achieved by adjusting the process times for deposition, etch back and thermal oxidation of poly-SiGe spacer islands. Our Ge QDs array provides a common platform for engineering diverse QD electronic devices with desired reconfigurability and optimizing their performance.
- Published
- 2021