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Graphene, a two dimensional material with sp2 hybridized carbon atoms arranged in honey comb lattice, is known for its unique electronic and mechanical properties. Soon after the isolation of 2D graphene crystals Quantum Hall effect (QHE) has been observed in this material at room temperature. The Quantum Hall plateaus in graphene have large spacing between the Landau levels in comparison to other 2DEGs, which makes it an ideal material for a quantum resistance standard defined by the electron charge and Planck s constant. We will present results for graphene by Chemical Vapor Deposition (CVD) and transferred to SiO2/Si using different techniques. The transferred graphene films were patterned into millimeter scale Hall bar geometry and characterized using confocal Raman spectroscopy. First electrical transport measurements will be presented.