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Your search keyword '"L.F. Tiemeijer"' showing total 2 results
Start Over Author "L.F. Tiemeijer" Journal 30th european solid-state device research conference
2 results on '"L.F. Tiemeijer"'

1. RF Distortion Characterisation of Sub-Micron CMOS

Author

D.B.M. Klaassen, O. Gaillard, Pierre H. Woerlee, R. van Langevelde, P.G.M. Baltus, R.J. Havens, and L.F. Tiemeijer

Subjects
Materials science, CMOS, business.industry, Distortion, Semiconductor device modeling, Electronic engineering, Optoelectronics, Linearity, Radio frequency, business
Published
2000

2. RF-CMOS Performance Trends

Author

D.B.M. Klaassen, Andreas H. Montree, R. van Langevelde, P.W.H. de Vreede, L.F. Tiemeijer, and Pierre H. Woerlee

Subjects
Power gain, Engineering, business.industry, Semiconductor device modeling, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Noise figure, Noise (electronics), Cutoff frequency, CMOS, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Radio frequency, business, NMOS logic, Hardware_LOGICDESIGN
Abstract

The impact of scaling on the analog performance of MOS devices at RF frequencies was studied. Trends in the RF performance of nominal gate length NMOS devices from 350-nm to 50-nm CMOS technologies are presented. Both experimental data and circuit simulations with an advanced validated compact model (MOS Model 11) have been used to evaluate the RF performance. RF performance metrics such as the cutoff frequency, maximum oscillation frequency, power gain, noise figure, linearity, and 1 noise were included in the analysis. The focus of the study was on gate and drain bias conditions relevant for RF circuit design. A scaling methodology for RF-CMOS based on limited linearity degradation is proposed.

Published
2000

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