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A vital objective in the wetting of Au deposited on chemically heterogeneous oxides is to synthesize a completely continuous, highly crystalline, ultrathin-layered geometry with minimized electrical and optical losses. However, no effective solution has been proposed for synthesizing an ideal Au-layered structure. This study presents evidence for the effectiveness of atomic oxygen-mediated growth of such an ideal Au layer by improving Au wetting on ZnO substrates with a substantial reduction in free energy. The unexpected outcome of the atomic oxygen-mediated Au growth can be attributed to the unconventional segregation and incorporation of atomic oxygen along the outermost boundaries of Au nanostructures evolving in the clustering and layering stages. Moreover, the experimental and numerical investigations revealed the spontaneous migration of atomic oxygen from an interstitial oxygen surplus ZnO bulk to the Au-ZnO interface, as well as the segregation (float-out) of the atomic oxygen toward the top Au surfaces. Thus, the implementation of a 4-nm-thick, two-dimensional, quasi-single-crystalline Au layer with a nearly complete crystalline realignment at a mild temperature (570 K) enabled exceptional optoelectrical performance with record-low resistivity (7.5 × 10

Controlling the shape and crystallography of nanocrystals during the early growth stages of a noble metal layer is important because of its correlation with the final layer morphology and optoelectrical features, but this task is unattainable in vapor deposition processes dominated by artificially uncontrollable thermodynamic free energies. We report on experimental evidence for the controllable evolution of Ag nanocrystals as induced by the addition of nitrogen, presumed to be nonresidual in the Ag lattice given its strong float-out behavior. This atypical formation of energetically stable Ag nanocrystals with significantly improved wetting abilities on a chemically heterogeneous substrate promotes the development of an atomically flat, ultrathin, high-purity Ag layer with a thickness of only 5 nm. This facilitates the fabrication of Ag thin-film electrodes exhibiting highly enhanced optical transparency over a broad spectral range in the visible and near-infrared spectral range. An Ag thin-film electrode with a ZnO/Ag/ZnO configuration exhibits an average transmittance of about 95% in the spectral range of 400-800 nm with a maximum transmittance of over 98% at 580 nm, which is comparable with the best transparency values so far reported for transparent electrodes. This degree of optical transparency provides an excellent chance to improve the photon absorption of photovoltaic devices employing an Ag thin film as their window electrode. This is clearly confirmed by the superior performance of a flexible organic solar cell with a power conversion efficiency of 8.0%, which is far superior to that of the same solar cell using a conventional amorphous indium tin oxide electrode (6.4%).

Improving the wetting ability of Ag on chemically heterogeneous oxides is technically important to fabricate ultrathin, continuous films that would facilitate the minimization of optical and electrical losses to develop qualified transparent Ag film electrodes in the state-of-the-art optoelectronic devices. This goal has yet to be attained, however, because conventional techniques to improve wetting of Ag based on heterogeneous metallic wetting layers are restricted by serious optical losses from wetting layers. Herein, we report on a simple and effective technique based on the partial oxidation of Ag nanoclusters in the early stages of Ag growth. This promotes the rapid evolution of the subsequently deposited pure Ag into a completely continuous layer on the ZnO substrate, as verified by experimental and numerical evidence. The improvement in the Ag wetting ability allows the development of a highly transparent, ultrathin (6 nm) Ag continuous film, exhibiting an average optical transmittance of 94% in the spectral range 400-800 nm and a sheet resistance of 12.5 Ω sq-1, which would be well-suited for application to an efficient front window electrode for flexible solar cell devices fabricated on polymer substrates.

The development of highly efficient flexible transparent electrodes (FTEs) supported on polymer substrates is of great importance to the realization of portable and bendable photovoltaic devices. Highly conductive, low-cost Cu has attracted attention as a promising alternative for replacing expensive indium tin oxide (ITO) and Ag. However, highly efficient, Cu-based FTEs are currently unavailable because of the absence of an efficient means of attaining an atomically thin, completely continuous Cu film that simultaneously exhibits enhanced optical transmittance and electrical conductivity. Here, strong two-dimensional (2D) epitaxy of Cu on ZnO is reported by applying an atomically thin (around 1 nm) oxygen-doped Cu wetting layer. Analyses of transmission electron microscopy images and X-ray diffraction patterns, combined with first-principles density functional theory calculations, reveal that the reduction in the surface and interface free energies of the wetting layers with a trace amount (1-2 atom %) of oxygen are largely responsible for the two-dimensional epitaxial growth of the Cu on ZnO. The ultrathin 2D Cu layer, embedded between ZnO films, exhibits a highly desirable optical transmittance of over 85% in a wavelength range of 400-800 nm and a sheet resistance of 11 Ω sq

Molybdenum disulfide with atomic-scale flatness has application potential in high-speed and low-power logic devices owing to its scalability and intrinsic high mobility. However, to realize viable technologies based on two-dimensional materials, techniques that enable their large-area growth with high quality and uniformity on wafer cale is a prerequisite. Here, we provide a route toward highly uniform growth of a wafer-scale, four-layered MoS2 film on a 2 in. substrate via a sequential process consisting of the deposition of a molybdenum trioxide precursor film by sputtering followed by postsulfurization using a chemical vapor deposition process. Spatial spectroscopic analyses by Raman and PL mapping validated that the as-synthesized MoS2 thin films exhibit high uniformity on a 2 in. sapphire substrate. The highly uniform MoS2 layers allow a successful integration of devices based on ∼1200 MoS2 transistor arrays with a yield of 95% because of their extreme homogeneity on Si wafers. Moreover, a pulse elec...