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The switching characteristics and performance of oxide-based memristors are predominately determined by oxygen- or oxygen-vacancy-mediated redox reactions and the consequent formation of conducting filaments (CFs). Devices using oxide thin films as the switching layer usually require an electroforming process for subsequent switching operations, which induces large device-to-device variations. In addition, the hard-to-control redox reaction during repeated switching causes random fluctuations or degradation of each resistance state, hindering reliable switching operations. In this study, an HfO2nanorod (NR)-based memristor is proposed for simultaneously achieving highly uniform, electroforming-free, fast, and reliable analogue switching properties. The well-controlled redox reaction due to the easy gas exchange with the environment at the surface of the NRs enhances the generation of oxygen or oxygen vacancies during the switching operation, resulting in electroforming-free and reliable switching behavior. In addition, the one-dimensional surface growth of CFs facilitates highly linear conductance modulation with smaller conductance changes compared with the two-dimensional volume growth in thin-film-based memristors, resulting in a high accuracy of >92% in the Modified National Institute of Standards and Technology pattern-recognition test and desirable spike-timing-dependent plasticity.

The utilization of edge sites in two-dimensional materials including transition-metal dichalcogenides (TMDs) is an effective strategy to realize high-performance gas sensors because of their high catalytic activity. Herein, we demonstrate a facile strategy to synthesize the numerous edge sites of vertically aligned MoS2and larger surface area via SiO2nanorod (NRs) platforms for highly sensitive NO2gas sensor. The SiO2NRs encapsulated by MoS2film with numerous edge sites and partially vertical-aligned regions synthesized using simple thermolysis process of [(NH4)2MoS4]. Especially, the vertically aligned MoS2prepared on 500 nm thick SiO2NRs (500MoS2) shows approximately 90 times higher gas-sensing response to 50 ppm NO2at room temperature than the MoS2film prepared on flat SiO2, and the theoretical detection limit is as low as ∼2.3 ppb. Additionally, it shows reliable operation with reversible response to NO2gas without degradation at an operating temperature of 100 °C. The use of the proposed facile approach to synthesize vertically aligned TMDs using nanostructured platform can be extended for various TMD-based devices including sensors, water splitting catalysts, and batteries.

The utilization of p–p isotype heterojunctions is an effective strategy to enhance the gas sensing properties of metal-oxide semiconductors, but most previous studies focused on p–n heterojunctions owing to their simple mechanism of formation of depletion layers. However, a proper choice of isotype semiconductors with appropriate energy bands can also contribute to the enhancement of the gas sensing performance. Herein, we report nickel oxide (NiO)-decorated cobalt oxide (Co3O4) nanorods (NRs) fabricated using the multiple-step glancing angle deposition method. The effective decoration of NiO on the entire surface of Co3O4NRs enabled the formation of numerous p–p heterojunctions, and they exhibited a 16.78 times higher gas response to 50 ppm of C6H6at 350 °C compared to that of bare Co3O4NRs with the calculated detection limit of approximately 13.91 ppb. Apart from the p–p heterojunctions, increased active sites owing to the changes in the orientation of the exposed lattice surface and the catalytic effects of NiO also contributed to the enhanced gas sensing properties. The advantages of p–p heterojunctions for gas sensing applications demonstrated in this work will provide a new perspective of heterostructured metal-oxide nanostructures for sensitive and selective gas sensing.

Amorphous KNbO3(KN) film containing KN nanocrystals was grown on TiN/SiO2/Si substrate at 350 °C. This KN film showed a dielectric constant (εr) and a piezoelectric strain constant (d33) of 43 and 80 pm/V at 10 V, respectively, owing to the existence of KN nanocrystals. Piezoelectric nanogenerators (PNGs) were fabricated using KN films grown on the TiN/polyimide/poly(ethylene terephthalate) substrates. The PNG fabricated with the KN film grown at 350 °C showed an open-circuit output voltage of 2.5 V and a short-circuit current of 70 nA. The KN film grown at 350 °C exhibited a bipolar resistive switching behavior with good reliability characteristics that can be explained by the formation and rupture of the oxygen vacancy filaments. The KN resistive random access memory device powered by the KN PNG also showed promising resistive switching behavior. Moreover, the KN film shows good biocompatibility. Therefore, the KN film can be used for self-powered biomedical devices.

Self-assembled WO3thin film nanostructures with 1-dimensional villi-like nanofingers (VLNF) have been synthesized on the SiO2/Si substrate with Pt interdigitated electrodes using glancing angle deposition (GAD). Room-temperature deposition of WO3by GAD resulted in anisotropic nanostructures with large aspect ratio and porosity having a relative surface area, which is about 32 times larger than that of a plain WO3film. A WO3VLNF sensor shows extremely high response to nitric oxide (NO) at 200 °C in 80% of relative humidity atmosphere, while responses of the sensor to ethanol, acetone, ammonia, and carbon monoxide are negligible. Such high sensitivity and selectivity to NO are attributed to the highly efficient modualtion of potential barriers at narrow necks between individual WO3VLNF and the intrinsically high sensitivity of WO3to NO. The theoretical detection limit of the sensor for NO is expected to be as low as 88 parts per trillion (ppt). Since NO is an approved biomarker of chronic airway inflammation in asthma, unprecedentedly high response and selectivity, and ppt-level detection limit to NO under highly humid environment demonstrate the great potential of the WO3VLNF for use in high performance breath analyzers.