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Organic photodetectors (OPDs) are cheaper and more flexible than conventional photodetectors based on inorganic precursors, but their wider commercial application is limited by their low electron extraction efficiency under reverse bias conditions (when operating under photoconductive mode). Zinc oxide (ZnO) has shown promise as an electron transport layer for OPDs owing to its wide band gap, but its electron extraction efficiency has been limited by issues such as photoinstability and the formation of surface detects. This study investigated the effects of doping ZnO nanoparticles with indium gallium (i.e., Indium gallium zinc oxide (IGZO)) and ytterbium gallium (i.e., Ytterbium gallium zinc oxide (YGZO)) on the electron extraction efficiency, conductivity, and dark current suppression of the resulting OPD. Both dopants blended uniformly into the sol–gel ZnO framework, which reduced the roughness and improved the surface properties. Compared with ZnO, both IGZO and YGZO slightly shifted the absorption spectra and reduced the dark current density while improving the specific detectivity under reverse bias conditions. We introduce a metric called the Jones factor (JF) as the ratio of the specific detectivity under zero bias conditions to the specific detectivity under reverse bias conditions. Both IGZO and YGZO had much lower JF values than ZnO, which indicates that their specific detectivity drops much less than that of ZnO when the OPD shifts from photovoltaic mode (i.e., zero bias) to photoconductive mode (i.e., reverse bias). Thus, they are potentially better materials for the electron transport layer of the OPDs with a higher electron extraction efficiency.

The electrical and optical characteristics of two-dimensional (2D) transition-metal dichalcogenides (TMDCs) can be improved by surface modification. In this study, distinctive field-effect transistors (FETs) were realized by forming cross-type 2D WSe2/MoS2p–n heterojunctions through surface treatment using poly(methyl methacrylate-co-methacrylic acid) (PMMA-co-PMAA). The FETs were applied to new ternary inverters as multivalued logic circuits (MVLCs). Laser confocal microscope photoluminescence spectroscopy indicated the generation of trions in the WSe2and MoS2layers, and the intensity decreased after PMMA-co-PMAA treatment. For the cross-type WSe2/MoS2p–n heterojunction FETs subjected to PMMA-co-PMAA treatment, the channel current and the region of anti-ambipolar transistor characteristics increased considerably, and ternary inverter characteristics with three stable logic states, “1”, “1/2”, and “0”, were realized. Interestingly, the intermediate logic state 1/2, which results from the negative differential transconductance characteristics, was realized by the turn-on of all component FETs, as the current of the FETs increased after PMMA-co-PMAA treatment. The electron-rich carboxyl acid moieties in PMMA-co-PMAA can undergo coordination with the metal Mo or W atoms present in the Se or S vacancies, respectively, resulting in the modulation of charge density. These features yielded distinctive FETs and ternary inverters for MVLCs using cross-type WSe2/MoS2heterojunctions.

Perovskite CsPbX3(X = Br, Cl, and I) nanostructures have been intensively studied as they are luminescent, photovoltaic, and photosensitizing active materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) with MX2(M = Mo, W; X = S, Se, Te, etc.) structures have been used in flexible optoelectronic devices. In this study, perovskite green-light-emitting CsPbBr2I1quantum dots (QDs) and blue-light-emitting CsPb(Cl/Br)3-QDs are utilized to enhance the photoresponsive characteristics of 2D MSe2(M = Mo and W)-based field-effect transistors (FETs). From laser confocal microscopy photoluminescence (PL) experiments, PL quenching of the perovskite CsPb(Cl/Br)3-QDs and CsPbBr2I1-QDs is observed after hybridization with MoSe2and WSe2layers, respectively, which reflects the charge-transfer effect. According to the characteristics of the FETs based on the WSe2, MoSe2, WSe2/CsPbBr2I1-QDs hybrid, and MoSe2/CsPb(Cl/Br)3-QDs hybrid, the p-channel current (with hole mobility) is considerably decreased after the hybridization with the QDs. Notably, under incident light, the n-channel photocurrent and photoresponsivity of the FET are substantially increased, and the threshold voltage is negatively shifted owing to the hybridization with the perovskite QDs. The results show that the photosensitive n-type doping effect on the 2D MoSe2and WSe2nanosystems originates from the photogating effect by the trap states after the hybridization with various perovskite CsPbX3-QDs.

An n-type MoS2monolayer grown by chemical vapor deposition method was partially hybridized with an organic semiconducting p-type tetracene thin film. The photoluminescence (PL) intensity in the hybrid region of the MoS2/tetracene is clearly lower than that of pristine tetracene because of the charge-transfer effect, which was confirmed by the decrease in exciton lifetimes. Decrease in the temperature led to blue-shift in the PL peak position of MoS2layers and, consequently, the PL intensities of both tetracene and MoS2considerably increased owing to the decrease in phonon interaction. The PL spectra of bound excitons in the hybrid region were clearly observed at low temperatures, indicating the formation of trap states. The lateral-type n–p heterojunction field-effect transistors (FETs) using the MoS2/tetracene hybrid as an active layer showed gate-tunable rectification I–Vand anti-ambipolar field-effect characteristics with hysteresis effect. The charge transport characteristics across the n–p heterojunction of the hybrid region of the FET can be explained in terms of the Shockley–Read–Hall trap-intermediated tunneling and Langevin recombination mechanisms. To improve the performance of MoS2/tetracene-based FET, a dielectric hexagonal boron nitride (h-BN) thin layer was inserted between the SiO2surface and the active MoS2layer. We observed the decrease in the hysteresis effect and threshold voltage of the h-BN/MoS2/tetracene-based FETs due to the decrease in the number of traps at the interface. The performance of h-BN/MoS2/tetracene FET device was also enhanced after the annealing process.

The effect of a nanoscale boron subphthalocyanine chloride (SubPc) interfacial layer on the performance of inverted polymer solar cells based on poly (3-hexyl thiophene) (P3HT) and [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM) was studied. When a 1 nm SubPc layer was introduced between the active layer (P3HT:PC71BM) and MoOxin the device with ITO/ZnO/P3HT:PC71BM/SubPc/MoOx/Al configuration, the power conversion efficiency (PCE) was increased from 3.42 (without SubPc) to 3.59%. This improvement is mainly attributed to the enhanced open-circuit voltage from 0.62 to 0.64 V. When the Flory–Huggins interaction parameters were estimated from the solubility parameters through the contact angle measurement, it revealed that the interaction between SubPc and PC71BM is more attractive than that between SubPc and P3HT at the interface of P3HT:PC71BM/SubPc, through which charges are well transported from the active layer to the anode. This is supported by a decrease of the contact resistance from 5.49 (SubPc 0 nm) to 0.94 MΩ cm (SubPc 1 nm). The photoelectron spectra provide another evidence for the enhanced PCE, exhibiting that the 1 nm thick SubPc layer extracts more photoelectrons from the active layer than other thicknesses.

Nanofluidic arrays containing high-aspect-ratio nanochannels were used as a platform for the deposition of all nanoparticle multilayers. LbL assembly of 6 nm titania and 15 nm silica nanoparticles resulted in conformal multilayers of uniform thickness throughout the nanochannels. These multilayers are inherently nanoporous with void volume fractions of about 0.5. Compared to unconfined assembly of the same materials on flat substrates, thinner multilayer films were observed for the case of deposition within confined channel geometries because of surface charge-induced electrostatic depletion of the depositing species. Additionally, systematic and reproducible bridging of the nanochannels occurred as multilayer assembly progressed, a phenomenon not seen in our earlier work involving polyelectrolytes. This behavior was attributed to relatively weak nanoparticle adsorption and the resulting formation of large aggregates. These results demonstrate a new route by which confined geometries can be coated and even bridged with a nanoporous multilayer without the need for calcination or other postassembly steps to introduce porosity into the conformal coating.