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Here we reported the doping of graphdiyne in P3CT-K in MAPbI3perovskite solar cells as hole-transport materials. The doping could improve the surface wettability of P3CT-K, and the resulting perovskite morphology was improved with homogeneous coverage and reduced grain boundaries. Simultaneously, it increased the hole-extraction mobility and reduced the recombination as well as improved the performance of devices. Therefore, a high efficiency of 19.5% was achieved based on improved short-circuit current and fill factor. In addition, hysteresis of the J–Vcurve was also obviously reduced. This work paves the way for the development of highly efficient perovskite solar cells.

In this work, PC61BM:SnO2electron transport layers (ETLs) were applied in inverted CH3NH3PbI3perovskite solar cells, and a high power conversion efficiency of 19.7% could be obtained. It increased by 49.0% in comparison with the device based on PC61BM-only ETL (13.2%). SnO2nanocrystals with excellent dispersibility were employed here to fill the pinholes and cover the valleys of PC61BM layer, forming smooth and compact PC61BM:SnO2layers. Simultaneously, the electron traps caused by deep-level native defects of SnO2were reduced by PC61BM, proved by the space charge limited current analysis. Thus, PC61BM:SnO2ETLs can inhibit both of the defects in PC61BM and SnO2layers which contribute to the electron transport improvement and reduce the recombination loss. Moreover, the device stability based on the bilayer was significantly improved in comparison with the PC61BM-only device and the performance of 85% could be maintained after 1 month.