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In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400–nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (−1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (−0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.

Self-powered photodetectors have triggered widespread attention because of the requirement of Internet of Things (IoT) application and low power consumption. However, it is challenging to simultaneously implement miniaturization, high quantum efficiency, and multifunctionalization. Here, we report a high-efficiency and polarization-sensitive photodetector enabled by two-dimensional (2D) WSe2/Ta2NiSe5/WSe2van der Waals (vdW) dual heterojunctions (DHJ) along with a sandwich-like electrode pair. On account of enhanced light collection efficiency and two opposite built-in electric fields at the hetero-interfaces, the DHJ device achieves not only a broadband spectral response of 400–1550 nm but outstanding performance under 635 nm light illumination including an ultrahigh external quantum efficiency (EQE) of 85.5%, a pronounced power conversion efficiency (PCE) of 1.9%, and a fast response speed of 420/640 μs, which is much better than that of the WSe2/Ta2NiSe5single heterojunction (SHJ). Significantly, based on the strong in-plane anisotropy of 2D Ta2NiSe5nanosheets, the DHJ device shows competitive polarization sensitivities of 13.9 and 14.8 under 635 and 808 nm light, respectively. Furthermore, an excellent self-powered visible imaging capability based on the DHJ device is demonstrated. These results pave a promising platform for realizing self-powered photodetectors with high performance and multifunctionality.

Heterogeneous photocatalysts are extensively used to achieve interfacial electric fields for acceleration of oriented charge carrier transport and further promotion of photocatalytic redox reactions. Unfortunately, the incoherent interfaces are almost present in the heterostructures owing to large lattice mismatch accompanied by the interfacial defects and high density of gap states, acting as high energy barriers for charge migration. In this work, we report the atomic engineering of CsPbBr3/PbSe heterogeneous interfaces and conversion from incoherent features to semicoherent characters via methyl acetate (MeOAc) purification of CsPbBr3quantum dots (QDs) before composited with two-dimensional (2D)-PbSe, which is confirmed by high-resolution transmission electron microscopy. The photocatalytic performances and theoretical calculations indicate that semicoherent interfaces are favorable for improving the activity and reactivity of the heterostructure, triggering 3 times enhanced photocatalytic CO2reduction rate with 91% selectivity and satisfactory stability. This study proposes a facile method for photocatalytic heterojunctions to transform incoherent interfaces to photocatalytically beneficial semicoherent boundaries, accompanying with a systematic analysis of the consequent chemical dynamics to demonstrate the mechanism of the semicoherent interface for supporting photocatalysis. The understandings gained from this work are valuable for rational interfacial lattice engineering of heterogeneous photocatalysts for efficient solar fuel production.

Schottky-barrier field-effect transistors (SBFETs) based on multilayer WS2with Au as drain/source contacts are fabricated in this paper. Interestingly, the novel polarity behavior of the WS2SBFETs can be modulated by drain bias, ranging from p-type to ambipolar and finally to n-type conductivity, due to the transition of band structures and Schottky-barrier heights under different drain and gate biases. The electron mobility and the on/off ratio of electron current can reach as high as 23.4 cm2/(V s) and 8.5 × 107, respectively. Moreover, the WS2SBFET possesses high-performance photosensitive characteristics with response time of 40 ms, photoresponsivity of 12.4 A/W, external quantum efficiency of 2420%, and photodetectivity as high as 9.28 × 1011cm Hz1/2/W. In conclusion, the excellent performance of the WS2SBFETs may pave the way for next-generation electronic and photoelectronic devices.