Search

Your search keyword '"Shi, Jingyuan"' showing total 5 results
Start Over Author "Shi, Jingyuan" Journal acs applied materials & interfaces
5 results on '"Shi, Jingyuan"'

1. Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal–Insulator–Semiconductor Electronic Devices

Author

Deng, Kexin, primary, Wang, Xinhua, additional, Huang, Sen, additional, Li, Pengfei, additional, Jiang, Qimeng, additional, Yin, Haibo, additional, Fan, Jie, additional, Wei, Ke, additional, Zheng, Yingkui, additional, Shi, Jingyuan, additional, and Liu, Xinyu, additional

Published
2023
Full Text
View/download PDF

3. Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor

Author

Shi Jingyuan, Zhi Jin, Guanghui Yu, Zhang Dayong, Shaoqing Wang, Songang Peng, and Mao Dacheng

Subjects
010302 applied physics, Materials science, Condensed matter physics, Graphene, Infrasound, Fermi level, 02 engineering and technology, 021001 nanoscience & nanotechnology, Graphene field effect transistors, 01 natural sciences, Noise (electronics), law.invention, symbols.namesake, law, 0103 physical sciences, symbols, General Materials Science, Flicker noise, Current (fluid), Noise level, 0210 nano-technology
Abstract

A top-gated graphene FET with an ultralow 1/f noise level of 1.8 × 10–12 μm2Hz1– (f = 10 Hz) has been fabricated. The noise has the least value at Dirac point, it then increases fast when the current deviates from that at Dirac point, the noise slightly decreases at large current. The phenomenon can be understood by the carrier-number-fluctuation induced low frequency noise, which caused by the trapping-detrapping processes of the carriers. Further analysis suggests that the effect trap density depends on the location of Fermi level in graphene channel. The study has provided guidance for suppressing the 1/f noise in graphene-based applications.

Published
2017

5. Carrier-Number-Fluctuation Induced Ultralow 1/fNoise Level in Top-Gated Graphene Field Effect Transistor

Author

Peng, Songang, Jin, Zhi, Zhang, Dayong, Shi, Jingyuan, Mao, Dacheng, Wang, Shaoqing, and Yu, Guanghui

Abstract

A top-gated graphene FET with an ultralow 1/fnoise level of 1.8 × 10–12μm2Hz1–(f= 10 Hz) has been fabricated. The noise has the least value at Dirac point, it then increases fast when the current deviates from that at Dirac point, the noise slightly decreases at large current. The phenomenon can be understood by the carrier-number-fluctuation induced low frequency noise, which caused by the trapping-detrapping processes of the carriers. Further analysis suggests that the effect trap density depends on the location of Fermi level in graphene channel. The study has provided guidance for suppressing the 1/fnoise in graphene-based applications.

Published
2017
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results