Search

Palladium diselenide (PdSe2) exhibits air stability, low symmetry, and high carrier mobility, resulting in unique in-plane anisotropy for polarized optoelectronic devices. However, the relationship of the symmetry and the terahertz (THz) radiation remains elusive yet significant for both the THz source in technology and nonlinear optical physics in science. Herein, we observed large in-plane anisotropic THz radiation from multilayer PdSe2 under femtosecond laser excitation. The THz emission demonstrates 2α dependence on the optical polarization angle from the resonant optical rectification combined with a background from the photocarrier acceleration under the surface depletion field. Interestingly, the in-plane THz emission along and perpendicular to the puckered direction demonstrates large anisotropy. Furthermore, the THz time-domain signals exhibit reversed polarities along the positive and negative puckered directions. This asymmetric polarization could relate to the bonding of Pd-Se, resulting in the unidirectional photon-induced current. Our results bridge the gap between the low-symmetry two-dimensional materials and the THz technology, which could promote the development of THz-polarized devices based on low-symmetry layered materials.

Graphene/semiconductor heterostructures demonstrate an improvement of traditional electronic and optoelectronic devices because of their outstanding charge transport properties inside and at the interfaces. However, very limited information has been accessed from the interfacial properties by traditional measurement. Herein, we present an active THz surface emission spectroscopy for the interface build-in potential and charge detrapping time constant evaluation from the interface of graphene on SiO2/Si (Gr/SiO2/Si). The active THz generation presents an intuitive insight into the depletion case, weak inversion case, and strong inversion case at the interface in the heterostructure. By analyzing the interface electric-field-induced optical rectification (EFIOR) in a strong inversion case, the intrinsic build-in potential is identified as -0.15 V at Gr/SiO2/Si interface. The interface depletion layer presents 44% positive THz intrinsic modulation by the reverse gate voltage and 70% negative THz intrinsic modulation by the forward gate voltage. Moreover, a time-dependent THz generation measurement has been used to deduce the charge detrapping decay time constant. The investigation will not only highlight the THz surface emission spectroscopy for the graphene-based interface analysis but also demonstrate the potential for the efficient THz intrinsic modulation as well as the enhancement of THz emission by the heterostructures.