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Start Over Author "Ye, Lei" Journal acs applied materials & interfaces
20 results on '"Ye, Lei"'

1. Zwitterionic Injectable Hydrogel-Combined Chemo- and Immunotherapy Medicated by Monomolecular Micelles to Effectively Prevent the Recurrence of Tumor Post Operation

Author

Wang, Rong, primary, Hu, Qiaoying, additional, Huang, Susu, additional, Fang, Yuelin, additional, Kong, Xinru, additional, Kaur, Prabhleen, additional, Zhang, Jicheng, additional, Wang, Yanqing, additional, Liu, Dongzhu, additional, Wu, Hang, additional, Li, Yingying, additional, Ji, Jianbo, additional, Yang, Xiaoye, additional, Ye, Lei, additional, and Zhai, Guangxi, additional

Published
2024
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6. Transition-Metal Single Atom Anchored on MoS2for Enhancing Photocatalytic Hydrogen Production of g-C3N4Photocatalysts

Author

Han, Xin, Liu, Qiaona, Qian, An, Ye, Lei, Pu, Xin, Liu, Jichang, Jia, Xin, Wang, Rongjie, Ju, Feng, Sun, Hui, Zhao, Jigang, and Ling, Hao

Abstract

Single-atom catalyst technology with near-100% atomic utilization and a well-defined coordination structure has provided new ideas for designing high-performance photocatalysts, which is also beneficial for reducing the usage of noble metal cocatalysts. Herein, a series of single-atomic MoS2-based cocatalysts where monoatomic Ru, Co, or Ni modify MoS2(SA-MoS2) for enhancing the photocatalytic hydrogen production performance of g-C3N4nanosheets (NSs) are rationally designed and synthesized. The 2D SA-MoS2/g-C3N4photocatalysts with Ru, Co, or Ni single atoms show similar enhanced photocatalytic activity, and the optimized Ru1–MoS2/g-C3N4photocatalyst has the highest hydrogen production rate of 11115 μmol/h/g, which is about 37 and 5 times higher than that of pure g-C3N4and MoS2/g-C3N4photocatalysts, respectively. Experimental and density functional theory calculation results reveal that the enhanced photocatalytic performance is mainly attributed to the synergistic effect and intimate interface between SA-MoS2with well-defined coordination single-atomic structures and g-C3N4NSs, which is conducive to the rapid interfacial charge transport, and the unique single-atomic structure of SA-MoS2with modified electronic structure and appropriate hydrogen adsorption performance offers abundant reactive sites for enhancing the photocatalytic hydrogen production performance. This work provides new insight into improving the cocatalytic hydrogen production performance of MoS2by a single-atomic strategy.

Published
2023
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13. Oxygen Vacancy Compensation-Induced Analog Resistive Switching in the SrFeO3−δ/Nb:SrTiO3Epitaxial Heterojunction for Noise-Tolerant High-Precision Image Recognition

Author

Su, Rui, Chen, Dunbao, Cheng, Weiming, Xiao, Ruizi, Deng, Yuheng, Duan, Yufeng, Li, Yi, Ye, Lei, An, Hongyu, Xu, Jingping, Lai, Peter To, and Miao, Xiangshui

Abstract

Neuromorphic computing, inspired by the brain’s architecture, promises to surpass the limitations of von Neumann computing. In this paradigm, synaptic devices play a crucial role, with resistive switching memory (memristors) emerging as promising candidates due to their low power consumption and scalability advantages. This study focuses on the development of metal/oxide-semiconductor heterojunctions, which offer several technological advantages and have broad potential for applications in artificial neural synapses. However, constructing high-quality epitaxial interfaces between metal and oxide semiconductors and designing modifiable contact barriers are challenging. Herein, we construct high-quality epitaxial metal/semiconductor interfaces based on the metallicity of the perovskite phase SrFeO3−δ(PV-SFO) and a small Schottky barrier in contact with Nb-doped SrTiO3(NSTO). X-ray diffraction patterns, reciprocal space mapping results, and cross-sectional transmission electron microscopy images reveal that the prepared PV-SFO film exhibits a perfect single-crystal structure and an excellent epitaxial interface with the NSTO (111) substrate. The corresponding memristor exhibits analog-type resistive-variable characteristics with an ON/OFF ratio of ∼1000, stable data retention after 10,000 s, and no noticeable fluctuation in resistance after 10,000 pulse cycles. Electron energy loss spectroscopy, first-principles calculations, and electrical measurements reveal that compensating or restoring oxygen vacancies at the NSTO surface decreases or increases the contact barrier between PV-SFO and NSTO, respectively, thereby gradually regulating the resistance value. Furthermore, high-quality epitaxial PV-SFO/NSTO devices achieve up to 98.21% recognition accuracy for handwriting recognition tasks using LeNet-5-based network structures and 92.21% accuracy for color images using visual geometry group (VGG) network structures. This work contributes to the advancement of interface-type memristors and provides valuable insights into enhancing synaptic functionality in neuromorphic computing systems.

Published
2024
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