1. Fermi Level Shifts of Organic Semiconductor Films in Ambient Air.
- Author
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Li X, Zhang Q, Chen Y, Liu X, Braun S, and Fahlman M
- Abstract
Here, the Fermi level ( E ) shifts of several donor and acceptor materials in different atmospheres are systematically studied by following the work function (WF) changes with Kelvin probe measurements, ultraviolet photoelectron spectroscopy, and near-ambient pressure X-ray photoelectron spectroscopy. Reversible
F shifts are found with the trend of higher WFs measured in ambient air and lower WFs measured in high vacuum compared to the WFs measured in ultrahigh vacuum. The E shifts are energy level and morphology-dependent, and two mechanisms are proposed: (1) competition between p-doping induced by OF and H EF complexes and n-doping induced by H2 and H2 O molecules preferentially modifying the ionization energy of one of the frontier molecular orbitals over the other. The results provide a deep understanding of the role of the O2 and H2 O; (2) polar H2 O molecules preferentially modifying the ionization energy of one of the frontier molecular orbitals over the other. The results provide a deep understanding of the role of the O2 and H2 O molecules in organic semiconductors, guiding the way toward air-stable organic electronic devices.- Published
- 2025
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