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Manipulating and integrating the microstructures at different scales is crucial to tune the electrical and thermal properties of a given compound. High-pressure sintering can modify the multiscale microstructures and thus empower the cutting-edge thermoelectric performance. In this work, the high-pressure sintering technique followed by annealing is adopted to prepare Gd-doped p -type (Bi 0.2 Sb 0.8 ) 2 (Te 0.97 Se 0.03 ) 3 alloys. First, the high energy of high-pressure sintering promotes the reduction of grain size, thus increasing the content of 2D grain boundaries. Next, high-pressure sintering induces strong interior strain, where 1D dense dislocations are generated near the strain field. More interestingly, the rare-earth element Gd with a high melting temperature is dissolved into the matrix via high-pressure sintering, thus promoting the formation of 0D extrinsic point defects. This concurrently improves the carrier concentration and density-of-state effective mass, resulting in an enhanced power factor. In addition, the integrated 0D point defects, 1D dislocations, and 2D grain boundaries by high-pressure sintering strengthen phonon scattering, thereby achieving a low lattice thermal conductivity of 0.5 Wm -1 K -1 at 348 K. Consequently, a maximum zT value of ∼1.1 at 348 K is achieved in the 0.4 at % Gd-doped (Bi 0.2 Sb 0.8 ) 2 (Te 0.97 Se 0.03 ) 3 sample. This work demonstrates that high-pressure sintering enables microstructure modification to enhance the thermoelectric performance of Bi 2 Te 3 -based and other bulk materials.

Simple, low-cost, and high-performance atmospheric water harvesting (AWH) still remains challenging in the context of global water shortage. Here, we present a simple and low-cost macroporous hydrogel for high-performance AWH to address this challenge. We employed an innovative strategy of pore foaming and vacuum drying to rationally fabricate a macroporous hydrogel. The hydrogel is endowed with a macroporous structure and a high specific surface area, enabling sufficient contact of the inner sorbent with outside air and high-performance AWH. The experiments demonstrate that macroporous hydrogels can achieve high-performance AWH with a broad range of sorption humidity [relative humidity (RH) from 100% to even lower than 20%], high water sorption capacity (highest 433.72% of hydrogel's own weight at ∼98% RH, 25 °C within 60 h), rapid vapor capturing (the sorption efficiency is as high as 0.32 g g -1 h -1 in the first 3 h at 90% RH, 25 °C), unique durability, low desorption temperature (∼50 °C, lowest), and high water-releasing rate (release 99.38% of the sorbed water under 500 W m -2 light for 6 h). The results show that this macroporous hydrogel can sorb water more than 193.46% of its own weight overnight (13 h) at a RH of ∼90%, 25 °C and release as high as 99.38% of the sorbed water via the photothermal effect. It is estimated that the daily water yield can reach up to approximately 2.56 kg kg -1 day -1 in real outdoor conditions, enabling daily minimum water consumption of an adult. Our simple, affordable, and easy-to-scale-up macroporous hydrogel can not only unleash the unlimited possibilities for large-scale and high-performance AWH but also offer promising opportunities for functional materials, soft matter, flexible electronics, tissue engineering, and biomedical applications.

Lead-free SnTe-based materials are expected to replace PbTe and have gained much attention from the thermoelectric community. In this work, a maximum ZT of ∼1.31 at 873 K is attained in SnTe via promoting a high quality factor resulting from Mn alloying and BiBr 3 doping. The results show that Mn alloying in SnTe converges the L band and the ∑ band in valence bands to supply enhanced valley degeneracy and the density of states effective mass, giving rise to a high power factor of ∼21.67 μW cm -1 K -2 at 723 K in Sn 0.93 Mn 0.1 Te. In addition, the subsequent BiBr 3 doping can sharpen the top of the valence band to coordinate the contradiction between the band effective mass and the carrier mobility, thus enhancing the carrier mobility while maintaining a relatively large density of states effective mass. Consequently, a maximum power factor of 23.85 μW cm -1 K -2 at 873 K is achieved in Sn 0.93 Mn 0.1 Te-0.8 atom % BiBr 3 . In addition to band sharpening, BiBr 3 doping can also effectively suppress the bipolar effect at elevated temperatures and reduce the lattice thermal conductivity by strengthening the point defect phonon scattering. Benefitting from doping BiBr 3 in Sn 0.93 Mn 0.1 Te optimizes the carrier mobility and suppresses the lattice thermal conductivity, resulting in a dramatically enhanced quality factor. Accordingly, an average ZT of ∼0.62 in the temperature range of 300-873 K is obtained in Sn 0.93 Mn 0.1 Te-0.8 atom % BiBr 3 , ∼250% increase compared with that in Sn 1.03 Te.

In thermoelectrics, the material's performance stems from a delicate tradeoff between atomic order and disorder. Generally, dopants and thus atomic disorder are indispensable for optimizing the carrier concentration and scatter short-wavelength heat-carrying phonons. However, the strong disorder has been perceived as detrimental to the semiconductor's electrical conductivity owing to the deteriorated carrier mobility. Here, we report the sustainable role of strong atomic disorder in suppressing the detrimental phase transition and enhancing the thermoelectric performance in GeTe. We found that AgSnSe 2 and Sb co-alloying eliminates the unfavorable phase transition due to the high configurational entropy and achieve the cubic Ge 1- x - y Sb y Te 1- x (AgSnSe 2 ) x solid solutions with cationic and anionic site disorder. Though AgSnSe 2 substitution drives the carrier mean free path toward the Ioffe-Regel limit and minimizes the carrier mobility, the increased carrier concentration could render a decent electrical conductivity, affording enough phase room for further performance optimization. Given the lowermost carrier mean free path, further Sb alloying on Ge sites was implemented to progressively optimize the carrier concentration and enhance the density-of-state effective mass, thereby substantially enhancing the Seebeck coefficient. In addition, the high density of nanoscale strain clusters induced by strong atomic disorders significantly restrains the lattice thermal conductivity. As a result, a state-of-the-art zT ≈ 1.54 at 773 K was attained in cubic Ge 0.58 Sb 0.22 Te 0.8 (AgSnSe 2 ) 0.2 . These results demonstrate that the strong atomic disorder at the high entropy scale is a previously underheeded but promising approach in thermoelectric material research, especially for the numerous low carrier mobility materials.