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Point-of-care monitoring of physiological signals such as electrocardiogram, electromyogram, and electroencephalogram is essential for prompt disease diagnosis and quick treatment, which can be realized through advanced skin-worn electronics. However, it is still challenging to design an intimate and nonrestrictive skin-contact device for physiological measurements with high fidelity and artifact tolerance. This research presents a facile method using a "tacky" surface to produce a tight interface between the ACNT skin-like electronic and the skin. The method provides the skin-worn electronic with a stretchability of up to 70% strain, greater than that of most common epidermal electrodes. Low-density ACNT bundles facilitate the infiltration of adhesive and improve the conformal contact between the ACNT sheet and the skin, while dense ACNT bundles lessen this effect. The stretchability and conformal contact allow the ACNT sheet-based electronics to create a tight interface with the skin, which enables the high-fidelity measurement of physiological signals (the Pearson's coefficient of 0.98) and tolerance for motion artifacts. In addition, our method allows the use of degradable substrates to enable reusability and degradability of the electronics based on ACNT sheets, integrating "green" properties into on-skin electronics.

The development of fifth-generation (5G) communications and the Internet of Things (IoT) has created a need for high-performance sensing networks and sensors. Improving the sensitivity and reducing the energy consumption of these sensors can improve the performance of the sensing network and conserve energy. This paper reports a large enhancement of the photovoltaic effect in a 3C-SiC/Si heterostructure and the tunability of the photovoltage under the impact of a temperature gradient, which has the potential to increase the sensitivity and reduce the energy consumption of microsensors. To start with, cubic silicon carbide (3C-SiC) was grown on a silicon wafer, and a micro-3C-SiC/Si heterostructure device was then fabricated using standard photolithography. The result revealed that the sensor could either capture light energy, transform it into electrical energy for self-power purposes, or detect light with intensities of 1.6 and 4 mW/cm 2 . Under the impact of the temperature gradient induced by conduction heat transfer from a heater, the measured photovoltage was improved. This thermo-phototronic coupling enhanced the photovoltage up to 51% at a temperature gradient of 8.73 K and light intensity of 4 mW/cm 2 . Additionally, the enhancement can be tuned by controlling the direction of the temperature gradient and the temperature difference. These findings indicate the promise of the temperature gradient in SiC/Si heterostructures for developing high-performance temperature sensors and self-powered photodetectors.

Electrohydrodynamic atomization (EHDA) provides unparalleled control over the size and production rate of particles from solution. However, conventional methods produce highly charged particles that are not appropriate for inhalation drug delivery. We present a self-propelled EHDA system to address this challenge, a promising one-step platform for generating and delivering charge-reduced particles. Our approach uses a sharp electrode to produce ion wind, which reduces the cumulative charge in the particles and transports them to a target in front of the nozzle. We effectively controlled the morphologies of polymer products created from poly(vinylidene fluoride) (PVDF) at various concentrations. Our technique has also been proven safe for bioapplications, as evidenced by the delivery of PVDF particles onto breast cancer cells. The combination of simultaneous particle production and charge reduction, along with its direct delivery capability, makes the self-propelled EHDA a versatile technique for drug delivery applications.

Giant piezoresistive effect enables the development of ultrasensitive sensing devices to address the increasing demands from hi-tech applications such as space exploration and self-driving cars. The discovery of the giant piezoresistive effect by optoelectronic coupling leads to a new strategy for enhancing the sensitivity of mechanical sensors, particularly with light from light-emitting diodes (LEDs). This paper reports on the piezoresistive effect in a 3C-SiC/Si heterostructure with a bonded LED that can reach a gauge factor (GF) as high as 18 000. This value represents an approximately 1000 times improvement compared to the configuration without a bonded LED. This GF is one of the highest GFs reported to date for the piezoresistive effect in semiconductors. The generation of carrier concentration gradient in the top thin 3C-SiC film under illumination from the LED coupling with the tuning current contributes to the modulation of the piezoresistive effect in a 3C-SiC/Si heterojunction. In addition, the feasibility of using different types of LEDs as the tools for modulating the piezoresistive effect is investigated by evaluating lateral photovoltage and photocurrent under LED's illumination. The generated lateral photovoltage and photocurrent are as high as 14 mV and 47.2 μA, respectively. Recent technologies for direct bonding of micro-LEDs on a Si-based device and the discovery reported here may have a significant impact on mechanical sensors.

Micromachined membranes are promising platforms for cell culture thanks to their miniaturization and integration capabilities. Possessing chemical inertness, biocompatibility, and integration, silicon carbide (SiC) membranes have attracted great interest toward biological applications. In this paper, we present the batch fabrication, mechanical characterizations, and cell culture demonstration of robust ultrathin epitaxial deposited SiC membranes. The as-fabricated ultrathin SiC membranes, with an ultrahigh aspect ratio (length/thickness) of up to 20 000, possess high a fracture strength up to 2.95 GPa and deformation up to 50 μm. A high optical transmittance of above 80% at visible wavelengths was obtained for 50 nm membranes. The as-fabricated membranes were experimentally demonstrated as an excellent substrate platform for bio-MEMS/NEMS cell culture with the cell viability rate of more than 92% after 72 h. The ultrathin SiC membrane is promising for in vitro observations/imaging of bio-objects with an extremely short optical access.

This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about -455 under illumination of 635 nm wavelength at 3.0 mW/cm 2 . This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required.

Single-crystal cubic silicon carbide has attracted great attention for MEMS and electronic devices. However, current leakage at the SiC/Si junction at high temperatures and visible-light absorption of the Si substrate are main obstacles hindering the use of the platform in a broad range of applications. To solve these bottlenecks, we present a new platform of single crystal SiC on an electrically insulating and transparent substrate using an anodic bonding process. The SiC thin film was prepared on a 150 mm Si with a surface roughness of 7 nm using LPCVD. The SiC/Si wafer was bonded to a glass substrate and then the Si layer was completely removed through wafer polishing and wet etching. The bonded SiC/glass samples show a sharp bonding interface of less than 15 nm characterized using deep profile X-ray photoelectron spectroscopy, a strong bonding strength of approximately 20 MPa measured from the pulling test, and relatively high optical transparency in the visible range. The transferred SiC film also exhibited good conductivity and a relatively high temperature coefficient of resistance varying from -12 000 to -20 000 ppm/K, which is desirable for thermal sensors. The biocompatibility of SiC/glass was also confirmed through mouse 3T3 fibroblasts cell-culturing experiments. Taking advantage of the superior electrical properties and biocompatibility of SiC, the developed SiC-on-glass platform offers unprecedented potentials for high-temperature electronics as well as bioapplications.