Search

Your search keyword '"Hong, Seungbum"' showing total 8 results
Start Over Author "Hong, Seungbum" Journal acs nano
8 results on '"Hong, Seungbum"'

1. Reducing Time to Discovery: Materials and Molecular Modeling, Imaging, Informatics, and Integration

Author

Hong, Seungbum, primary, Liow, Chi Hao, additional, Yuk, Jong Min, additional, Byon, Hye Ryung, additional, Yang, Yongsoo, additional, Cho, EunAe, additional, Yeom, Jiwon, additional, Park, Gun, additional, Kang, Hyeonmuk, additional, Kim, Seunggu, additional, Shim, Yoonsu, additional, Na, Moony, additional, Jeong, Chaehwa, additional, Hwang, Gyuseong, additional, Kim, Hongjun, additional, Kim, Hoon, additional, Eom, Seongmun, additional, Cho, Seongwoo, additional, Jun, Hosun, additional, Lee, Yongju, additional, Baucour, Arthur, additional, Bang, Kihoon, additional, Kim, Myungjoon, additional, Yun, Seokjung, additional, Ryu, Jeongjae, additional, Han, Youngjoon, additional, Jetybayeva, Albina, additional, Choi, Pyuck-Pa, additional, Agar, Joshua C., additional, Kalinin, Sergei V., additional, Voorhees, Peter W., additional, Littlewood, Peter, additional, and Lee, Hyuck Mo, additional

Published
2021
Full Text
View/download PDF

3. Quantitative Observation of Threshold Defect Behavior in Memristive Devices with Operando X-ray Microscopy

Author

Liu, Huajun, primary, Dong, Yongqi, additional, Cherukara, Mathew J., additional, Sasikumar, Kiran, additional, Narayanan, Badri, additional, Cai, Zhonghou, additional, Lai, Barry, additional, Stan, Liliana, additional, Hong, Seungbum, additional, Chan, Maria K. Y., additional, Sankaranarayanan, Subramanian K. R. S., additional, Zhou, Hua, additional, and Fong, Dillon D., additional

Published
2018
Full Text
View/download PDF

6. X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells

Author

Chang, Seo Hyoung, primary, Kim, Jungho, additional, Phatak, Charudatta, additional, D’Aquila, Kenneth, additional, Kim, Seong Keun, additional, Kim, Jiyoon, additional, Song, Seul Ji, additional, Hwang, Cheol Seong, additional, Eastman, Jeffrey A., additional, Freeland, John W., additional, and Hong, Seungbum, additional

Published
2014
Full Text
View/download PDF

7. Quantitative Observation of Threshold Defect Behavior in Memristive Devices with OperandoX-ray Microscopy

Author

Liu, Huajun, Dong, Yongqi, Cherukara, Mathew J., Sasikumar, Kiran, Narayanan, Badri, Cai, Zhonghou, Lai, Barry, Stan, Liliana, Hong, Seungbum, Chan, Maria K. Y., Sankaranarayanan, Subramanian K. R. S., Zhou, Hua, and Fong, Dillon D.

Abstract

Memristive devices are an emerging technology that enables both rich interdisciplinary science and novel device functionalities, such as nonvolatile memories and nanoionics-based synaptic electronics. Recent work has shown that the reproducibility and variability of the devices depend sensitively on the defect structures created during electroforming as well as their continued evolution under dynamic electric fields. However, a fundamental principle guiding the material design of defect structures is still lacking due to the difficulty in understanding dynamic defect behavior under different resistance states. Here, we unravel the existence of threshold behavior by studying model, single-crystal devices: resistive switching requires that the pristine oxygen vacancy concentration reside near a critical value. Theoretical calculations show that the threshold oxygen vacancy concentration lies at the boundary for both electronic and atomic phase transitions. Through operando, multimodal X-ray imaging, we show that field tuning of the local oxygen vacancy concentration below or above the threshold value is responsible for switching between different electrical states. These results provide a general strategy for designing functional defect structures around threshold concentrations to create dynamic, field-controlled phases for memristive devices.

Published
2018
Full Text
View/download PDF

8. Enhancement of Local Piezoresponse in Polymer Ferroelectrics viaNanoscale Control of Microstructure

Author

Choi, Yoon-Young, Sharma, Pankaj, Phatak, Charudatta, Gosztola, David J., Liu, Yunya, Lee, Joonseok, Lee, Byeongdu, Li, Jiangyu, Gruverman, Alexei, Ducharme, Stephen, and Hong, Seungbum

Abstract

Polymer ferroelectrics are flexible and lightweight electromechanical materials that are widely studied due to their potential application as sensors, actuators, and energy harvesters. However, one of the biggest challenges is their low piezoelectric coefficient. Here, we report a mechanical annealing effect based on local pressure induced by a nanoscale tip that enhances the local piezoresponse. This process can control the nanoscale material properties over a microscale area at room temperature. We attribute this improvement to the formation and growth of β-phase extended chain crystals viasliding diffusion and crystal alignment along the scan axis under high mechanical stress. We believe that this technique can be useful for local enhancement of piezoresponse in ferroelectric polymer thin films.

Published
2015
Full Text
View/download PDF

Catalog

Books, media, physical & digital resources
See catalog results