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Photodetectors, essential for a wide range of optoelectronic applications in both military and civilian sectors, face challenges in balancing responsivity, detectivity, and response time due to their inherent unidirectional carrier transport mechanism. Multifunctional photodetectors that address these trade-offs are highly sought after for their potential to reduce costs, simplify system design, and surpass Moore’s Law limitations. Herein, we present a multimodal phototransistor based on a 2D MoTe2/In2S3heterostructure. Through dual electrical modulation employing bias voltage and gate voltage, we engineer the energy band to achieve switchable photoresponse mechanisms between photoconductive and photovoltaic modes. In photoconductive mode, the device exhibits a responsivity of 320 A/W and a specific detectivity of 1.2 × 1013Jones. Meanwhile, in photovoltaic mode, it exhibits a light on/off ratio of 2 × 105and response speed of 0.68/0.60 ms. These capabilities enable multifunctional applications such as high-resolution imaging across various wavelengths, a conceptual optoelectronic logic gate, and dual-channel optical communication. This work makes an advancement in the development of future multifunctional optoelectronic devices.

Heterostructures constructed by low-dimensional (such as 0D, 1D, and 2D) materials have opened up opportunities for exploring interesting physical properties and versatile (opto)electronics. Recently, 2D/2D heterostructures, in particular, atomically thin graphene and transition-metal dichalcogenides, including graphene/MoS2, WSe2/MoS2, and WS2/WSe2, were efficiently prepared (by transfer techniques, chemical vapor deposition (CVD) growth, etc.) and systematically studied. In contrast, investigation of 1D/2D heterostructures was still very challenging and rarely reported, and the understanding of such heterostructures was also not well established. Herein, we demonstrate the one-step growth of a heterostructure on the basis of a 1D-Bi2S3nanowire and a 2D-MoS2monolayer through the CVD method. Multimeans were employed, and the results proved the separated growth of a Bi2S3nanowire and a MoS2sheet in the heterostructure rather than forming a BixMo1–xSyalloy due to their large lattice mismatch. Defect-induced co-nucleus growth, which was an important growth mode in 1D/2D heterostructures, was also experimentally confirmed and systematically investigated in our research. Such 1D/2D heterostructures were further fabricated and utilized in (opto)electronic devices, such as field-effect transistors and photodetectors, and revealed their potential for multifunctional design in electrical properties. The direct growth of such nanostructures will help us to gain a better comprehension of these specific configurations and allow device functionalities in potential applications.

Synthesis of large-scale highly crystalline two-dimensional alloys is significant for revealing properties. Here, we have investigated the vapor growth process of high-quality bilayer CoxMo1–xS2(x= 0.16) hexagonal nanosheets systematically. As the initial loading of the sulfur increases, the morphology of the CoxMo1–xS2(0 < x≤ 1) nanosheets becomes hexagons from David stars step by step at 680 °C. We find that Co atoms mainly distribute at the edge of nanosheets. When the temperature increases from 680 to 750 °C, high-quality cubic pyrite-type crystal structure CoS2grows on the surface of CoxMo1–xS2nanosheet gradually and forms hexagonal film induced by the nanosheet. Electrical transport measurements reveal that the CoxMo1–xS2nanosheets and CoS2films exhibit n-type semiconducting transport behavior and half-metallic behavior, respectively. Theoretical calculations of their band structures agree well with the experimental results.