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Nanolasers have great potential for both on-chip light sources and optical barcoding particles. We demonstrate ultrasmall InGaP and InGaAsP disk lasers with diameters down to 360 nm (198 nm in height) in the red spectral range. Optically pumped, room-temperature, single-mode lasing was achieved from both disk-on-pillar and isolated particles. When isolated disks were placed on gold, plasmon polariton lasing was obtained with Purcell-enhanced stimulated emission. UV lithography and plasma ashing enabled wafer-scale fabrication of nanodisks with an intended random size variation. Silica-coated nanodisk particles generated stable subnanometer spectra from within biological cells across an 80 nm bandwidth from 635 to 715 nm.

Stable electrical modulation of plasmonic nanolasers is achieved on a hybrid graphene-insulator-metal (GIM) platform at room temperature. To support surface plasmon polariton (SPP) resonance, a zinc oxide (ZnO) nanowire is placed on the GIM platform to create a plasmonic cavity with a compact mode volume of 2.6 × 10 -2 λ 3 , and the graphene layer is used as a transparent electrode for electrical modulation. When a gate voltage is applied, the surface electron density of Al varied, which results in the shifting of its plasma frequency and thus affects its SPP dispersion. In particular, this variation strongly changes the internal loss of the SPP mode; thus, the lasing thresholds of the ZnO nanowire plasmonic nanolasers on the GIM platform can be modulated by the gate voltage. This study demonstrates the gate voltage modulation of ZnO nanowire plasmonic nanolasers on a GIM platform at room temperature. These nanolasers can exhibit ultrahigh modulation speed on the order of terahertz. Accordingly, plasmonic nanolasers with gate voltage modulation have high potential for plasmonic circuit applications with high operation speed and versatility.

The plasmonic nanolaser is a class of lasers with the physical dimensions free from the optical diffraction limit. In the past decade, progress in performance, applications, and mechanisms of plasmonic nanolasers has increased dramatically. We review this advance and offer our prospectives on the remaining challenges ahead, concentrating on the integration with nanochips. In particular, we focus on the qualifications for electrical pumping, energy consumption, and ultrafast modulation. At last, we evaluate the strategies for on-chip source construction design and further threshold reduction to achieve a long-term room-temperature electrically pumped plasmonic nanolaser, the ultimate goal toward practical applications.

Lead halide perovskite materials have recently received considerable attention for achieving an economic and tunable laser owing to their solution-processable feature and promising optical properties. However, most reported perovskite-based lasers operate with a large lasing-mode volume, resulting in a high lasing threshold due to the inefficient coupling between the optical gain medium and cavity. Here, we demonstrate a continuous-wave nanolasing from a single lead halide perovskite (CsPbBr 3 ) quantum dot (PQD) in a plasmonic gap-mode nanocavity with an ultralow threshold of 1.9 Wcm -2 under 120 K. The calculated ultrasmall mode volume (∼0.002 λ 3 ) with a z -polarized dipole and the significantly large Purcell enhancement at the corner of the nanocavity inside the gap dramatically enhance the light-matter interaction in the nanocavity, thus facilitating lasing. The demonstration of PQD nanolasing with an ultralow-threshold provides an approach for realizing on-chip electrically driven lasing and integration into on-chip plasmonic circuitry for ultrafast optical communication and quantum information processing.

On-chip light sources are critical for the realization of fully integrated photonic circuitry. So far, semiconductor miniaturized lasers have been mainly limited to sizes on the order of a few microns. Further reduction of sizes is challenging fundamentally due to the associated radiative losses. While using plasmonic metals helps to reduce radiative losses and sizes, they also introduce Ohmic losses hindering real improvements. In this work, we show that, making use of quasibound states in the continuum, or supercavity modes, we circumvent these fundamental issues and realize one of the smallest purely semiconductor nanolasers thus far. Here, the nanolaser structure is based on a single semiconductor nanocylinder that intentionally takes advantage of the destructive interference between two supported optical modes, namely Fabry-Perot and Mie modes, to obtain a significant enhancement in the quality factor of the cavity. We experimentally demonstrate the concept and obtain optically pumped lasing action using GaAs at cryogenic temperatures. The optimal nanocylinder size is as small as 500 nm in diameter and only 330 nm in height with a lasing wavelength around 825 nm, corresponding to a size-to-wavelength ratio as low as 0.6.

Arrays of metallic particles patterned on a substrate have emerged as a promising design for on-chip plasmonic lasers. In past examples of such devices, the periodic particles provided feedback at a single resonance wavelength, and organic dye molecules were used as the gain material. Here, we introduce a flexible template-based fabrication method that allows a broader design space for Ag particle-array lasers. Instead of dye molecules, we integrate colloidal quantum dots (QDs), which offer better photostability and wavelength tunability. Our fabrication approach also allows us to easily adjust the refractive index of the substrate and the QD-film thickness. Exploiting these capabilities, we demonstrate not only single-wavelength lasing but dual-wavelength lasing via two distinct strategies. First, by using particle arrays with rectangular lattice symmetries, we obtain feedback from two orthogonal directions. The two output wavelengths from this laser can be selected individually using a linear polarizer. Second, by adjusting the QD-film thickness, we use higher-order transverse waveguide modes in the QD film to obtain dual-wavelength lasing at normal and off-normal angles from a symmetric square array. We thus show that our approach offers various design possibilities to tune the laser output.

The tailored spatial polarization of coherent light beams is important for applications ranging from microscopy to biophysics to quantum optics. Miniaturized light sources are needed for integrated, on-chip photonic devices with desired vector beams; however, this issue is unresolved because most lasers rely on bulky optical elements to achieve such polarization control. Here, we report on quantum dot-plasmon lasers with engineered polarization patterns controllable by near-field coupling of colloidal quantum dots to metal nanoparticles. Conformal coating of CdSe-CdS core-shell quantum dot films on Ag nanoparticle lattices enables the formation of hybrid waveguide-surface lattice resonance (W-SLR) modes. The sidebands of these hybrid modes at nonzero wavevectors facilitate directional lasing emission with either radial or azimuthal polarization depending on the thickness of the quantum dot film.

The many advantageous optoelectronic properties of lead halide perovskites have made them promising materials in both solar cells and light source applications. However, lead halide perovskites are soluble in polar solvents, which hinders their practical applications. Thus, the effective protection of perovskite against polar solvents is of great significance. Herein, we report a waterproof CsPbBr 3 nanoplate (NP) laser protected by large-scale on-chip microprocess-compatible atomic layer deposition (ALD) Al 2 O 3 . The 50 nm Al 2 O 3 coated CsPbBr 3 NPs can continuously lase in water for over an hour and can still lase after being immersed in water for a month. Moreover, the lasing behaviors of the 20 nm Al 2 O 3 coated CsPbBr 3 NP, in the mixed solution of water and glycerine with the refractive index ranging from 1.33 to 1.47, are also studied. As the environmental refractive index increases, the NP laser goes through a mode selection process, showing single-mode (540.3 nm) to dual-mode and to single-mode (533.9 nm) lasing behavior, which is caused by mode competition resulting from the decrease of quality factor ( Q factor) and the blue-shift of the material's gain spectra. Besides, lasing thresholds of the CsPbBr 3 NP increase with the environmental refractive index, which can be utilized for sensing with a measured sensitivity of 129.7 μJ cm -2 RIU -1 (per refractive index unit) (388.2 μJ cm -2 RIU -1 ) for the long (short)-wavelength lasing mode. Our work demonstrates that the ALD Al 2 O 3 protection method can effectively protect CsPbBr 3 against polar solvents, enhance the material's stability, and enable perovskite's practical applications in both on-chip integration and solvent systems.

Concentration quenching is a well-known challenge in many fluorescence imaging applications. Here, we show that the optical emission from hundreds of chromophores confined onto the surface of a 28 nm diameter virus particle can be recovered under pulsed irradiation. We have found that as one increases the number of chromophores tightly bound to the virus surface, fluorescence quenching ensues at first, but when the number of chromophores per particle is nearing the maximum number of surface sites allowable, a sudden brightening of the emitted light and a shortening of the excited-state lifetime are observed. This radiation brightening occurs only under short pulse excitation; steady-state excitation is characterized by conventional concentration quenching for any number of chromophores per particle. The observed suppression of fluorescence quenching is consistent with efficient, collective relaxation at room temperature. Interestingly, radiation brightening disappears when the emitters' spatial and/or dynamic heterogeneity is increased, suggesting that the template structural properties may play a role that could be instrumental in developing virus-enabled imaging vectors that have optical properties qualitatively different than those of state-of-the-art biophotonic agents.