1. Metal Semiconductor Field-Effect Transistor with MoS2/Conducting NiOx van der Waals Schottky Interface for Intrinsic High Mobility and Photoswitching Speed
- Author
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Pyo Jin Jeon, Hyoung Joon Choi, Hee Sung Lee, Sung Wook Min, Seongil Im, Jae Hoon Kim, Seung Su Baik, Kimoon Lee, Jin Sung Kim, and Kyujin Choi
- Subjects
Electron mobility ,Materials science ,business.industry ,Band gap ,Schottky barrier ,General Engineering ,General Physics and Astronomy ,Schottky diode ,Nanotechnology ,symbols.namesake ,Semiconductor ,symbols ,Optoelectronics ,General Materials Science ,MESFET ,Field-effect transistor ,van der Waals force ,business - Abstract
Molybdenum disulfide (MoS2) nanosheet, one of two-dimensional (2D) semiconductors, has recently been regarded as a promising material to break through the limit of present semiconductors. With an apparent energy band gap, it certainly provides a high carrier mobility, superior subthreshold swing, and ON/OFF ratio in field-effect transistors (FETs). However, its potential in carrier mobility has still been depreciated since the field-effect mobilities have only been measured from metal–insulator–semiconductor (MIS) FETs, where the transport behavior of conducting carriers located at the insulator/MoS2 interface is unavoidably interfered by the interface traps and gate voltage. Moreover, thin MoS2 MISFETs have always shown large hysteresis with unpredictable negative threshold voltages. Here, we for the first time report MoS2-based metal semiconductor field-effect transistors (MESFETs) using NiOx Schottky electrode which makes van der Waals interface with MoS2. We thus expect that the maximum mobilities or ...
- Published
- 2015