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Your search keyword '"de Gendt, Stefan"' showing total 11 results
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11 results on '"de Gendt, Stefan"'

1. Correction to Doping Graphene with Substitutional Mn

Author

Lin, Pin-Cheng, primary, Villarreal, Renan, additional, Achilli, Simona, additional, Bana, Harsh, additional, Nair, Maya N., additional, Tejeda, Antonio, additional, Verguts, Ken, additional, De Gendt, Stefan, additional, Auge, Manuel, additional, Hofsäss, Hans, additional, De Feyter, Steven, additional, Di Santo, Giovanni, additional, Petaccia, Luca, additional, Brems, Steven, additional, Fratesi, Guido, additional, and Pereira, Lino M. C., additional

Published
2022
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2. Multicomponent Covalent Chemical Patterning of Graphene

Author

Rodríguez González, Miriam C., primary, Leonhardt, Alessandra, additional, Stadler, Hartmut, additional, Eyley, Samuel, additional, Thielemans, Wim, additional, De Gendt, Stefan, additional, Mali, Kunal S., additional, and De Feyter, Steven, additional

Published
2021
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3. Doping Graphene with Substitutional Mn

Author

Lin, Pin-Cheng, primary, Villarreal, Renan, additional, Achilli, Simona, additional, Bana, Harsh, additional, Nair, Maya N., additional, Tejeda, Antonio, additional, Verguts, Ken, additional, De Gendt, Stefan, additional, Auge, Manuel, additional, Hofsäss, Hans, additional, De Feyter, Steven, additional, Di Santo, Giovanni, additional, Petaccia, Luca, additional, Brems, Steven, additional, Fratesi, Guido, additional, and Pereira, Lino M. C., additional

Published
2021
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4. Graphene Meets Ionic Liquids: Fermi Level Engineering via Electrostatic Forces

Author

Velpula, Gangamallaiah, primary, Phillipson, Roald, additional, Lian, Jian Xiang, additional, Cornil, David, additional, Walke, Peter, additional, Verguts, Ken, additional, Brems, Steven, additional, Uji-i, Hiroshi, additional, De Gendt, Stefan, additional, Beljonne, David, additional, Lazzaroni, Roberto, additional, Mali, Kunal S., additional, and De Feyter, Steven, additional

Published
2019
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5. Achieving High Substitutional Incorporation in Mn-Doped Graphene

Author

Villarreal, Renan, Zarkua, Zviadi, Kretschmer, Silvan, Hendriks, Vince, Hillen, Jonas, Tsai, Hung Chieh, Junge, Felix, Nissen, Matz, Saha, Tanusree, Achilli, Simona, Hofsäss, Hans C., Martins, Michael, De Ninno, Giovanni, Lacovig, Paolo, Lizzit, Silvano, Di Santo, Giovanni, Petaccia, Luca, De Feyter, Steven, De Gendt, Stefan, Brems, Steven, Van de Vondel, Joris, Krasheninnikov, Arkady V., and Pereira, Lino M. C.

Abstract

Despite its broad potential applications, substitution of carbon by transition metal atoms in graphene has so far been explored only to a limited extent. We report the realization of substitutional Mn doping of graphene to a record high atomic concentration of 0.5%, which was achieved using ultralow-energy ion implantation. By correlating the experimental data with the results of ab initio Born–Oppenheimer molecular dynamics calculations, we infer that direct substitution is the dominant mechanism of impurity incorporation. Thermal annealing in ultrahigh vacuum provides efficient removal of surface contaminants and additional implantation-induced disorder, resulting in Mn-doped graphene that, aside from the substitutional Mn impurities, is essentially as clean and defect-free as the as-grown layer. We further show that the Dirac character of graphene is preserved upon substitutional Mn doping, even in this high concentration regime, making this system ideal for studying the interaction between Dirac conduction electrons and localized magnetic moments. More generally, these results show that ultralow energy ion implantation can be used for controlled functionalization of graphene with substitutional transition-metal atoms, of relevance for a wide range of applications, from magnetism and spintronics to single-atom catalysis.

Published
2024
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6. Graphene Meets Ionic Liquids: Fermi Level Engineering viaElectrostatic Forces

Author

Velpula, Gangamallaiah, Phillipson, Roald, Lian, Jian Xiang, Cornil, David, Walke, Peter, Verguts, Ken, Brems, Steven, Uji-i, Hiroshi, De Gendt, Stefan, Beljonne, David, Lazzaroni, Roberto, Mali, Kunal S., and De Feyter, Steven

Abstract

Graphene-based two-dimensional (2D) materials are promising candidates for a number of different energy applications. A particularly interesting one is in next generation supercapacitors, where graphene is being explored as an electrode material in combination with room temperature ionic liquids (ILs) as electrolytes. Because the amount of energy that can be stored in such supercapacitors critically depends on the electrode–electrolyte interface, there is considerable interest in understanding the structure and properties of the graphene/IL interface. Here, we report the changes in the properties of graphene upon adsorption of a homologous series of alkyl imidazolium tetrafluoroborate ILs using a combination of experimental and theoretical tools. Raman spectroscopy reveals that these ILs cause n-type doping of graphene, and the magnitude of doping increases with increasing cation chain length despite the expected decrease in the density of surface-adsorbed ions. Molecular modeling simulations show that doping originates from the changes in the electrostatic potential at the graphene/IL interface. The findings described here represent an important step in developing a comprehensive understanding of the graphene/IL interface.

Published
2019
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7. Correction to Doping Graphene with Substitutional Mn.

Author

Lin, Pin-Cheng, Villarreal, Renan, Achilli, Simona, Bana, Harsh, Nair, Maya N., Tejeda, Antonio, Verguts, Ken, De Gendt, Stefan, Auge, Manuel, Hofsäss, Hans, De Feyter, Steven, Di Santo, Giovanni, Petaccia, Luca, Brems, Steven, Fratesi, Guido, and Pereira, Lino M. C.

Published
2023
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8. Capturing Wetting States in Nanopatterned Silicon

Author

Xu, XiuMei, primary, Vereecke, Guy, additional, Chen, Chang, additional, Pourtois, Geoffrey, additional, Armini, Silvia, additional, Verellen, Niels, additional, Tsai, Wei-Kang, additional, Kim, Dong-Wook, additional, Lee, Eunsongyi, additional, Lin, Chang-You, additional, Van Dorpe, Pol, additional, Struyf, Herbert, additional, Holsteyns, Frank, additional, Moshchalkov, Victor, additional, Indekeu, Joseph, additional, and De Gendt, Stefan, additional

Published
2014
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11. Correction to Doping Graphene with Substitutional Mn.

Author

Pin-Cheng Lin, Villarreal, Renan, Achilli, Simona, Bana, Harsh, Nair, Maya N., Tejeda, Antonio, Verguts, Ken, De Gendt, Stefan, Auge, Manuel, Hofsäss, Hans, De Feyter, Steven, Di Santo, Giovanni, Petaccia, Luca, Brems, Steven, Fratesi, Guido, and Pereira, Lino M. C.

Published
2022
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