1. Surface Zeta Potential and Diamond Seeding on Gallium Nitride Films
- Author
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Mandal, Soumen, Thomas, Evan L. H., Middleton, Callum, Gines, Laia, Griffiths, James, Kappers, Menno, Oliver, Rachel, Wallis, David J., Goff, Lucy E., Lynch, Stephen A., Kuball, Martin, Williams, Oliver A., Griffiths, James [0000-0002-1198-1372], Oliver, Rachel [0000-0003-0029-3993], Wallis, David [0000-0002-0475-7583], and Apollo - University of Cambridge Repository
- Subjects
lcsh:Chemistry ,Condensed Matter - Materials Science ,34 Chemical Sciences ,lcsh:QD1-999 ,Materials Science (cond-mat.mtrl-sci) ,FOS: Physical sciences ,CDTR ,4018 Nanotechnology ,QC ,40 Engineering - Abstract
Measurement of zeta potential of Ga and N-face gallium nitride has beencarried out as function of pH. Both the faces show negative zeta potential inthe pH range 5.5-9. The Ga face has an isoelectric point at pH 5.5. The N-faceshows higher negative zeta potential due to larger concentration of adsorbedoxygen. Zeta potential data clearly showed that H-terminated diamond seedsolution at pH 8 will be optimal for the self assembly of a monolayer ofdiamond nanoparticles on the GaN surface. Subsequent growth of thin diamondfilms on GaN seeded with H-terminated diamond seeds produced fully coalescedfilms confirming a seeding density in excess of 10$^{12}$ cm$^{-2}$. Thistechnique removes the requirement for a low thermal conduction seeding layerlike silicon nitride on GaN.
- Published
- 2017
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