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The optical properties of the CdO and Pt doped CdO thin films synthesized by sol-gel technique were investigated. The lowest grain size value (81.34 nm) was found to be for CdO thin film. The Pt doped CdO films are transformed to clusters with nanoparticles. The transparency properties of the CdO thin film is changed with Pt doping. The plots of refractive index indicate abnormal and normal dispersion regions. The refractive index values of the CdO thin film are changed with Pt doping. The direct optical band gap values of the films were changed with doping of Pt. The film of 0.5% Pt doped CdO indicates the lowest optical band gap value (2.421 eV). The imaginary parts of the optical conductivity of the CdO and Pt doped CdO thin films are higher than that of the real parts of the optical conductivity. [ABSTRACT FROM AUTHOR]

The effects of ultraviolet laser radiation on the structure and optical properties of allyl diglycol carbonate have been investigated. The allyl diglycol carbonate samples were irradiated with 266 nm with different power densities from Nd:YAG laser. The bulk etch rate enhancement and enlargement of track diameter clearly indicate that allyl diglycol carbonate is significantly affected by UV laser. The laser-irradiated allyl diglycol carbonate samples showed a decrease in the optical band gap with increasing laser power density. The obtained results indicate that the optical band gap of the alpha irradiated polymer is varied from 4.10 eV to 2.65 eV by UV laser irradiation. [ABSTRACT FROM AUTHOR]

The impedance characteristics of the nanostructure p-ZnGa2Se4/n-Si heterojunction diode were investigated by impedance spectroscopy method in the temperature range (303-503 K) and the frequency range (42 Hz -5 MHz). The real and imaginary parts of the complex impedance are changed with the frequency. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the diode was analyzed by the Cole-Cole plots. The Cole-Cole plots under various temperatures exhibit one relaxation mechanism. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation. [ABSTRACT FROM AUTHOR]

The electrical characterization of the Al/p-Si/P3HT/Ag organic-on-inorganic diode was done by current-voltage, capacitance-voltage and conductance-voltage methods. The values of ideality factor and barrier height of the diode were determined from the current-voltage characteristics and found as 2.32 and 0.77 eV, respectively. These values were also determined from Cheung's functions and Norde's method due to the non-ideal behavior of the diode. The electronic parameters obtained from the various methods indicate a good consistency with each other. The density of interface states for Al/p-Si/P3HT/Ag organic-on-inorganic diode was found to be 7:64 × 1010 cm-2 eV-1. The obtained electrical parameters of the Al/p-Si/P3HT/Ag organic-on-inorganic diode are higher than that of the conventional Ag/p-Si Schottky diodes. This indicates that the electrical properties of the silicon Schottky diodes can be controlled using organic interfacial layer. [ABSTRACT FROM AUTHOR]

The photovoltaic and electronic properties of p-Si/poly[2-methoxy,5-(2-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV):[6, 6]-phenyl C61-butyric acid methyl ester (PCBM) organic-inorganic device have been investigated. The current-voltage characteristic of p-Si/PCBM:MEH-PPV photodiode includes series resistance effect and the diode indicates a non-ideal behavior. The photovoltaic effect in p-Si/PCBM:MEH-PPV photodiode is based on the formation of excitons and subsequent dissociation and charge collection at the electrodes. It is evaluated that p-Si/PCBM:MEH-PPV device is a photodiode with Voc of 84 mV and Isc of 3.47 nA electronic parameters. [ABSTRACT FROM AUTHOR]