Search

Recent studies indicate that synaptic scaling is a vital mechanism to solve instability risks brought by the positive feedback of synaptic weight change related with standalone Hebbian plasticity. There are two kinds of synaptic scaling in the neural network, including local scaling and global scaling, both important for stabilizing the neural function. In this paper, for the first time, local synaptic scaling is emulated based on the MoS2 neuristor. The first‐principle calculation reveals that synaptic scaling achieved by the neuristor is associated with an internal residual Li+‐related weak dynamical process. Experimental results show the potential of achieving global synaptic scaling by the same device. Moreover, inspired by the synaptic scaling in the human brain, a new method of weight mapping called weight scaling mapping (WSM) is proposed to improve the stability of an artificial neural network (ANN). The simulation results indicate that WSM can improve the accuracy and anti‐noise ability of the network compared with the traditional mapping method. These findings provide new insight into bionic research and help advance the construction of stable neuromorphic systems. [ABSTRACT FROM AUTHOR]

3D integration of vertical resistive random access memory (VRRAM) with organic materials is promising for ultra‐high density flexible data storage. However, it is extremely challenging to heterogeneously fabricate an organic 3D VRRAM due to complicated issues such as chemical/thermal robustness, compatibility of organic/inorganic materials, and processes of stacking/patterning multi‐layer organic/metal films. Herein, an organic flexible 3D VRRAM based on parylene‐C is experimentally demonstrated on a standard complementary metal oxide semiconductor platform for the first time. The proposed 3D VRRAM can be homogenously fabricated based solely on parylene‐C (except the metal electrodes), significantly facilitating the 3D integration owing to chemical stability and compatibility with standard photolithography patterning. The flexible 3D organic memory arrays demonstrate great memory characteristics including retention time >105 s, endurance cycles >300, and resistance ON/OFF ratio >10. Further, a finite element analysis is established to model and investigate the scaling potential of the organic 3D VRRAM. The simulation results indicate the elevated temperature during programming could be catastrophic for ultra‐high density 3D VRRAM if the feature size approaches ≈100 nm or below, urging the containment of programming power to avoid thermal issues as well as to save energy consumption. [ABSTRACT FROM AUTHOR]