1. Ultralow‐Power Atomic‐Scale Tin Transistor with Gate Potential in Millivolt
- Author
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Fangqing Xie, Fabian Ducry, Mathieu Luisier, Juerg Leuthold, and Thomas Schimmel
- Subjects
atom-based electronics ,beyond complementary metal-oxide-semiconductors ,single-atom transistors ,sustainability ,ultralow-power dissipation ,EBL ,Physics ,ddc:530 ,2021-027-030749 ,Electronic, Optical and Magnetic Materials - Abstract
After decades of continuous scaling, further advancement of complementary metal-oxide-semiconductor (CMOS) technology across the entire spectrum of computing applications is today limited by power dissipation, which scales with the square of the supply voltage. Here, an atomic-scale tin transistor is demonstrated to perform conductive switching between bistable configurations with on/off potentials, Advanced Electronic Materials, 8 (10), ISSN:2199-160X
- Published
- 2022
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