1. Customizing the Polarity of Single-Walled Carbon-Nanotube Field-Effect Transistors Using Solution-Based Additives
- Author
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Wytse Talsma, Herman Duim, Stefan Jung, Mustapha Abdu-Aguye, Nils Froehlich, Sybille Allard, Maria Antonietta Loi, Ullrich Scherf, Jorge Mario Salazar-Rios, Aprizal Akbar Sengrian, and Photophysics and OptoElectronics
- Subjects
Fabrication ,Materials science ,POWER ,02 engineering and technology ,Carbon nanotube ,doping ,010402 general chemistry ,01 natural sciences ,PARAMETERS ,law.invention ,polarity control ,SELECTIVE DISPERSION ,law ,polymer wrapping ,N-TYPE DOPANT ,single-walled carbon nanotubes ,TEMPERATURE ,Electronic circuit ,Ambipolar diffusion ,business.industry ,THRESHOLD VOLTAGE ,Doping ,Transistor ,field-effect transistors ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Electronic, Optical and Magnetic Materials ,Threshold voltage ,NETWORKS ,Optoelectronics ,Field-effect transistor ,0210 nano-technology ,business ,CIRCUITS - Abstract
Polarity control in semiconducting single-walled carbon-nanotube field-effect transistors (s-SWNT FETs) is important to promote their application in logic devices. The methods to turn the intrinsically ambipolar s-SWNT FETs into unipolar devices that have been proposed until now require extra fabrication steps that make preparation longer and more complex. It is demonstrated that by starting from a highly purified ink of semiconducting single-walled carbon nanotubes sorted by a conjugated polymer, and mixing them with additives, it is possible to achieve unipolar charge transport. The three additives used are benzyl viologen (BV), 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), which give rise to n-type field-effect transistors, and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ) which gives rise to p-type transistors. BV and N-DMBI transform the s-SWNTs transistors from ambipolar with mobility of the order of 0.7 cm(2) V-1 s(-1) to n-type with mobility up to 5 cm(2) V-1 s(-1). F-4-TCNQ transform the ambipolar transistors in p-type with mobility up to 16 cm(2) V-1 s(-1).
- Published
- 2020
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