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Organic field‐effect transistors (OFETs) hold great promise for applications in non‐volatile memories, detectors, and artificial synapses due to the good flexibility and biocompatibility. However, certain drawbacks such as high operating voltages and significant degradation in endurance characteristics have hindered their practical implementations. Herein, a novel approach is proposed to enhance the performance of OFETs by incorporating a bi‐functional n‐type polymer semiconductor interlayer, Poly‐{[N,N'‐bis(2‐octyldodecyl)naphthalene‐1,4,5,8‐bis(dicarboximide)‐2,6‐diyl]‐alt‐5,5′‐(2,2′‐bithiophene)} (N2200), into a pentacene OFET structure. The device exhibits remarkable improvements, with reliable P/E operation cycles of over than 104 and a retention time of more than 10 years. On one hand, the inclusion of N2200 as an n‐type semiconductor effectively reduces the height of hole‐injection barrier for trapping and thus reducing the working voltage based on the electrostatic induction theory. On the other hand, n‐type semiconductor N2200 serves as a native hole‐consumption (or hole‐trapping) dielectric, and its narrower bandgap restrains the formation of deep hole‐traps, thus favoring the endurance characteristics of the OFET. [ABSTRACT FROM AUTHOR]

The growth of large‐scale films forms the cornerstone for future integrated photodetection applications of 2D materials. However, there is still an unwelcome trade‐off between the size of these films and the performances of devices fabricated using them. To deal with this issue, a possible scheme for film assembly is proposed using high‐quality nanolayers to achieve both outstanding device performance and large film area. Specifically, photodetectors are fabricated on nanostructured BiI3 films (1 × 1 cm2) assembled with interlaced, vertically grown 2D nanoplates. These devices inherent the excellent photodetecting capability of single‐BiI3‐nanoplate‐based photodetectors, showing responsivity of up to 2.22 AW−1, high speed photoresponse of 2 ms/5.3 ms for rise/decay times, and outstanding specific detectivity as high as 1.65 × 1012 Jones. This suggest that this approach to preparing large‐scale 2D BiI3 films holds potential for the realization of integrated high‐performance photosensing devices. Furthermore, it is anticipated that it can be to other 2D materials. [ABSTRACT FROM AUTHOR]